RF-MBE growth and orientation control of GaN on epitaxial graphene
GaN is proven as the most important modern semiconductor with many potential applications. Although GaN growth is matured enough, unfortunately, it is still very difficult to obtain this material with the same quality as the Si crystal, either in heteroepitaxy or homoepitaxy. GaN has recently been p...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-01-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379720321306 |
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| author | Ashraful G. Bhuiyan Yuta Kamada Md. Sherajul Islam Riku Syamoto Daiki Ishimaru Akihiro Hashimoto |
| author_facet | Ashraful G. Bhuiyan Yuta Kamada Md. Sherajul Islam Riku Syamoto Daiki Ishimaru Akihiro Hashimoto |
| author_sort | Ashraful G. Bhuiyan |
| collection | DOAJ |
| description | GaN is proven as the most important modern semiconductor with many potential applications. Although GaN growth is matured enough, unfortunately, it is still very difficult to obtain this material with the same quality as the Si crystal, either in heteroepitaxy or homoepitaxy. GaN has recently been proposed to grow on two-dimensional (2D) layered material. This paper reports the van der Waals epitaxy (vdWE) and orientation control of GaN on epitaxial graphene (EG) by means of RF-MBE. A single crystalline GaN with a smooth surface on the EG is successfully obtained. It is found that the incorporation of an AlN intermediate layer on the EG surface significantly improves the GaN on EG. The AlN/EG structure can control the a-axis orientation of the nitride growth layer and improve the epitaxial layer quality. The GaN layers fabricated on the AlN/EG structure are also found to be free from interfacial stress. The quality of the GaN layer obtained on the AlN/EG structure is comparable to that of the GaN layer on the sapphire substrate. This research paves the way for the expansion of high-quality GaN on EG. |
| first_indexed | 2024-12-17T06:08:02Z |
| format | Article |
| id | doaj.art-daf391a238f640b7a6b352bb1610cc15 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-17T06:08:02Z |
| publishDate | 2021-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-daf391a238f640b7a6b352bb1610cc152022-12-21T22:00:42ZengElsevierResults in Physics2211-37972021-01-0120103714RF-MBE growth and orientation control of GaN on epitaxial grapheneAshraful G. Bhuiyan0Yuta Kamada1Md. Sherajul Islam2Riku Syamoto3Daiki Ishimaru4Akihiro Hashimoto5Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan; Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh; Corresponding author at: Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan.Graduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, JapanDepartment of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, BangladeshGraduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, JapanGraduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, JapanGraduate School of Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, JapanGaN is proven as the most important modern semiconductor with many potential applications. Although GaN growth is matured enough, unfortunately, it is still very difficult to obtain this material with the same quality as the Si crystal, either in heteroepitaxy or homoepitaxy. GaN has recently been proposed to grow on two-dimensional (2D) layered material. This paper reports the van der Waals epitaxy (vdWE) and orientation control of GaN on epitaxial graphene (EG) by means of RF-MBE. A single crystalline GaN with a smooth surface on the EG is successfully obtained. It is found that the incorporation of an AlN intermediate layer on the EG surface significantly improves the GaN on EG. The AlN/EG structure can control the a-axis orientation of the nitride growth layer and improve the epitaxial layer quality. The GaN layers fabricated on the AlN/EG structure are also found to be free from interfacial stress. The quality of the GaN layer obtained on the AlN/EG structure is comparable to that of the GaN layer on the sapphire substrate. This research paves the way for the expansion of high-quality GaN on EG.http://www.sciencedirect.com/science/article/pii/S2211379720321306GaNEpitaxial grapheneRF-MBEAlN intermediate layerAFMRaman |
| spellingShingle | Ashraful G. Bhuiyan Yuta Kamada Md. Sherajul Islam Riku Syamoto Daiki Ishimaru Akihiro Hashimoto RF-MBE growth and orientation control of GaN on epitaxial graphene Results in Physics GaN Epitaxial graphene RF-MBE AlN intermediate layer AFM Raman |
| title | RF-MBE growth and orientation control of GaN on epitaxial graphene |
| title_full | RF-MBE growth and orientation control of GaN on epitaxial graphene |
| title_fullStr | RF-MBE growth and orientation control of GaN on epitaxial graphene |
| title_full_unstemmed | RF-MBE growth and orientation control of GaN on epitaxial graphene |
| title_short | RF-MBE growth and orientation control of GaN on epitaxial graphene |
| title_sort | rf mbe growth and orientation control of gan on epitaxial graphene |
| topic | GaN Epitaxial graphene RF-MBE AlN intermediate layer AFM Raman |
| url | http://www.sciencedirect.com/science/article/pii/S2211379720321306 |
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