RF-MBE growth and orientation control of GaN on epitaxial graphene
GaN is proven as the most important modern semiconductor with many potential applications. Although GaN growth is matured enough, unfortunately, it is still very difficult to obtain this material with the same quality as the Si crystal, either in heteroepitaxy or homoepitaxy. GaN has recently been p...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-01-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379720321306 |