MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet transfer technique. The quality of t...
Main Authors: | Kazimieras Badokas, Arūnas Kadys, Dominykas Augulis, Jūras Mickevičius, Ilja Ignatjev, Martynas Skapas, Benjaminas Šebeka, Giedrius Juška, Tadas Malinauskas |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-02-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/12/5/785 |
Similar Items
-
Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
by: Alice Hospodková, et al.
Published: (2022-10-01) -
Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask
by: Arūnas Kadys, et al.
Published: (2023-02-01) -
Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
by: Maxim A. Ladugin, et al.
Published: (2019-06-01) -
Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE
by: Beata Ściana, et al.
Published: (2022-04-01) -
Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films
by: Fedor M. Kochetkov, et al.
Published: (2021-06-01)