Fabrication of CZTS Films through a Combined Electrodeposition and Solution Process: An Experimental and First‐Principles Study

Abstract Sulfurization has a critical role in preparation of CZTS films since the main drawback of CZTS is due to the presence of S‐based impurities. In general, sulfurization could be performed during or following annealing, or the entire CZTS structure could be prepared through sol‐gel. However, t...

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Main Authors: Prof. Ramazan Katirci, Mehmet Nurullah Onel, Ilhan Danaci, Kevser Irem Danaci, Dr. Salih Ozbay, Dr. Fuat Erden
Format: Article
Language:English
Published: Wiley-VCH 2023-07-01
Series:ChemElectroChem
Subjects:
Online Access:https://doi.org/10.1002/celc.202300162
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author Prof. Ramazan Katirci
Mehmet Nurullah Onel
Ilhan Danaci
Kevser Irem Danaci
Dr. Salih Ozbay
Dr. Fuat Erden
author_facet Prof. Ramazan Katirci
Mehmet Nurullah Onel
Ilhan Danaci
Kevser Irem Danaci
Dr. Salih Ozbay
Dr. Fuat Erden
author_sort Prof. Ramazan Katirci
collection DOAJ
description Abstract Sulfurization has a critical role in preparation of CZTS films since the main drawback of CZTS is due to the presence of S‐based impurities. In general, sulfurization could be performed during or following annealing, or the entire CZTS structure could be prepared through sol‐gel. However, toxic gases are used for the former, and the latter takes prolonged times. Alternatively, a combined electrodeposition and solution process was proposed in the present work to prepare CZTS. Briefly, we electrodeposited CZT layers on a metal substrate, and then immersed the as‐prepared coating in a S containing solution for the sulfurization. The effects of electrodeposition time, electrodeposition order, current density, electrolyte compositions, sulfurization time, and annealing pressure were studied. Overall, the results show that S content of the films varied between 27 and 52 % depending on process parameters, thus, suggesting the effectiveness of the proposed approach regarding sulfurization. However, various secondary phases were also detected as well as considerable amount of oxygen impurity. Accordingly, we opted for a computational approach to elucidate the effect of oxygen impurities, and report that the band gap of the films varied between 0.59 and 0.05 eV depending on the presence and which sites oxygen atoms occupy.
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spelling doaj.art-db2bc43816d54baaa785d2c494260b352023-07-17T09:25:55ZengWiley-VCHChemElectroChem2196-02162023-07-011014n/an/a10.1002/celc.202300162Fabrication of CZTS Films through a Combined Electrodeposition and Solution Process: An Experimental and First‐Principles StudyProf. Ramazan Katirci0Mehmet Nurullah Onel1Ilhan Danaci2Kevser Irem Danaci3Dr. Salih Ozbay4Dr. Fuat Erden5Department of Metallurgical and Materials Engineering Sivas University of Science and Technology 58000 Sivas TürkiyeDepartment of Astronautical Engineering Sivas University of Science and Technology 58000 Sivas TürkiyeDepartment of Aeronautical Engineering Sivas University of Science and Technology 58000 Sivas TürkiyeDepartment of Electrical and Electronics Engineering Sivas University of Science and Technology 58000 Sivas TürkiyeDepartment of Chemical Engineering Sivas University of Science and Technology 58000 Sivas TürkiyeDepartment of Aeronautical Engineering Sivas University of Science and Technology 58000 Sivas TürkiyeAbstract Sulfurization has a critical role in preparation of CZTS films since the main drawback of CZTS is due to the presence of S‐based impurities. In general, sulfurization could be performed during or following annealing, or the entire CZTS structure could be prepared through sol‐gel. However, toxic gases are used for the former, and the latter takes prolonged times. Alternatively, a combined electrodeposition and solution process was proposed in the present work to prepare CZTS. Briefly, we electrodeposited CZT layers on a metal substrate, and then immersed the as‐prepared coating in a S containing solution for the sulfurization. The effects of electrodeposition time, electrodeposition order, current density, electrolyte compositions, sulfurization time, and annealing pressure were studied. Overall, the results show that S content of the films varied between 27 and 52 % depending on process parameters, thus, suggesting the effectiveness of the proposed approach regarding sulfurization. However, various secondary phases were also detected as well as considerable amount of oxygen impurity. Accordingly, we opted for a computational approach to elucidate the effect of oxygen impurities, and report that the band gap of the films varied between 0.59 and 0.05 eV depending on the presence and which sites oxygen atoms occupy.https://doi.org/10.1002/celc.202300162CZTSelectrochemistryelectrodepositionsolution processsulfur
spellingShingle Prof. Ramazan Katirci
Mehmet Nurullah Onel
Ilhan Danaci
Kevser Irem Danaci
Dr. Salih Ozbay
Dr. Fuat Erden
Fabrication of CZTS Films through a Combined Electrodeposition and Solution Process: An Experimental and First‐Principles Study
ChemElectroChem
CZTS
electrochemistry
electrodeposition
solution process
sulfur
title Fabrication of CZTS Films through a Combined Electrodeposition and Solution Process: An Experimental and First‐Principles Study
title_full Fabrication of CZTS Films through a Combined Electrodeposition and Solution Process: An Experimental and First‐Principles Study
title_fullStr Fabrication of CZTS Films through a Combined Electrodeposition and Solution Process: An Experimental and First‐Principles Study
title_full_unstemmed Fabrication of CZTS Films through a Combined Electrodeposition and Solution Process: An Experimental and First‐Principles Study
title_short Fabrication of CZTS Films through a Combined Electrodeposition and Solution Process: An Experimental and First‐Principles Study
title_sort fabrication of czts films through a combined electrodeposition and solution process an experimental and first principles study
topic CZTS
electrochemistry
electrodeposition
solution process
sulfur
url https://doi.org/10.1002/celc.202300162
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