Single event response of ferroelectric spacer engineered SOI FinFET at 14 nm technology node
Abstract The impact of spacer on the single event response of SOI FinFET at 14 nm technology node is investigated. Based on the device TCAD model, well-calibrated by the experimental data, it is found that the spacer presents the enhancement on single event transient (SET) compared with no spacer co...
| Autors principals: | , |
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| Format: | Article |
| Idioma: | English |
| Publicat: |
Nature Portfolio
2023-07-01
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| Col·lecció: | Scientific Reports |
| Accés en línia: | https://doi.org/10.1038/s41598-023-36952-1 |