Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

<p>Abstract</p> <p>X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being &#8722;0.30 &#177; 0.09 eV and the corresponding conduction band offse...

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Bibliographic Details
Main Authors: Liu JM, Liu XL, Xu XQ, Wang J, Li CM, Wei HY, Yang SY, Zhu QS, Fan YM, Zhang XW, Wang ZG
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Valence band offset
w-InN/h-BN heterojunction
X-ray photoelectron spectroscopy
Conduction band offset
Online Access:http://dx.doi.org/10.1007/s11671-010-9650-x
Description
Summary:<p>Abstract</p> <p>X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being &#8722;0.30 &#177; 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 &#177; 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.</p>
ISSN:1931-7573
1556-276X

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