Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
<p>Abstract</p> <p>X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offse...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2010-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-010-9650-x |
| _version_ | 1797716683006148608 |
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| author | Liu JM Liu XL Xu XQ Wang J Li CM Wei HY Yang SY Zhu QS Fan YM Zhang XW Wang ZG |
| author_facet | Liu JM Liu XL Xu XQ Wang J Li CM Wei HY Yang SY Zhu QS Fan YM Zhang XW Wang ZG |
| author_sort | Liu JM |
| collection | DOAJ |
| description | <p>Abstract</p> <p>X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.</p> |
| first_indexed | 2024-03-12T08:25:09Z |
| format | Article |
| id | doaj.art-db8bc03bed8d4d4eb51c2c24e5ec9266 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T08:25:09Z |
| publishDate | 2010-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-db8bc03bed8d4d4eb51c2c24e5ec92662023-09-02T18:10:39ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-015813401343Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission SpectroscopyLiu JMLiu XLXu XQWang JLi CMWei HYYang SYZhu QSFan YMZhang XWWang ZG<p>Abstract</p> <p>X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.</p>http://dx.doi.org/10.1007/s11671-010-9650-xValence band offsetw-InN/h-BN heterojunctionX-ray photoelectron spectroscopyConduction band offsetValence band offset |
| spellingShingle | Liu JM Liu XL Xu XQ Wang J Li CM Wei HY Yang SY Zhu QS Fan YM Zhang XW Wang ZG Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy Nanoscale Research Letters Valence band offset w-InN/h-BN heterojunction X-ray photoelectron spectroscopy Conduction band offset Valence band offset |
| title | Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy |
| title_full | Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy |
| title_fullStr | Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy |
| title_full_unstemmed | Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy |
| title_short | Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy |
| title_sort | measurement of w inn h bn heterojunction band offsets by x ray photoemission spectroscopy |
| topic | Valence band offset w-InN/h-BN heterojunction X-ray photoelectron spectroscopy Conduction band offset Valence band offset |
| url | http://dx.doi.org/10.1007/s11671-010-9650-x |
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