Growth and electrical properties of AlOx grown by mist chemical vapor deposition
Aluminum oxide (AlOx) thin films were grown using aluminum acetylacetonate (Al(acac)3) as a source solute by mist chemical vapor deposition (mist CVD). The AlOx thin films grown at temperatures above 400°C exhibited a breakdown field (EBD) over 6 MV/cm and a dielectric constant (κ) over 6. It is sug...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2013-03-01
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| Series: | AIP Advances |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4798303 |
| _version_ | 1828474240757661696 |
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| author | Toshiyuki Kawaharamura Takayuki Uchida Masaru Sanada Mamoru Furuta |
| author_facet | Toshiyuki Kawaharamura Takayuki Uchida Masaru Sanada Mamoru Furuta |
| author_sort | Toshiyuki Kawaharamura |
| collection | DOAJ |
| description | Aluminum oxide (AlOx) thin films were grown using aluminum acetylacetonate (Al(acac)3) as a source solute by mist chemical vapor deposition (mist CVD). The AlOx thin films grown at temperatures above 400°C exhibited a breakdown field (EBD) over 6 MV/cm and a dielectric constant (κ) over 6. It is suggested that residual OH bonding in the AlOx thin films grown at temperatures below 375°C caused degradation of the breakdown field (EBD). With FC type mist CVD, the reaction proceeded efficiently (Ea = 22–24 kJ/mol) because the solvent, especially H2O, worked as a stronger oxygen source. The AlOx film could be grown at 450°C with a high deposition rate (23 nm/min) and smooth surface (RMS = 1.5 nm). Moreover, the AlOx thin films grown by mist CVD had excellent practicality as insulators because the gate leakage current (IG) of the oxide thin film transistor (TFT) with an IGZO/AlOx stack was suppressed below 1 pA at a gate voltage (VG) of 20 V. |
| first_indexed | 2024-12-11T05:56:42Z |
| format | Article |
| id | doaj.art-db90b462e3a64a17aa1c61b29b6e08ee |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T05:56:42Z |
| publishDate | 2013-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-db90b462e3a64a17aa1c61b29b6e08ee2022-12-22T01:18:39ZengAIP Publishing LLCAIP Advances2158-32262013-03-013303213503213510.1063/1.4798303Growth and electrical properties of AlOx grown by mist chemical vapor depositionToshiyuki KawaharamuraTakayuki UchidaMasaru SanadaMamoru FurutaAluminum oxide (AlOx) thin films were grown using aluminum acetylacetonate (Al(acac)3) as a source solute by mist chemical vapor deposition (mist CVD). The AlOx thin films grown at temperatures above 400°C exhibited a breakdown field (EBD) over 6 MV/cm and a dielectric constant (κ) over 6. It is suggested that residual OH bonding in the AlOx thin films grown at temperatures below 375°C caused degradation of the breakdown field (EBD). With FC type mist CVD, the reaction proceeded efficiently (Ea = 22–24 kJ/mol) because the solvent, especially H2O, worked as a stronger oxygen source. The AlOx film could be grown at 450°C with a high deposition rate (23 nm/min) and smooth surface (RMS = 1.5 nm). Moreover, the AlOx thin films grown by mist CVD had excellent practicality as insulators because the gate leakage current (IG) of the oxide thin film transistor (TFT) with an IGZO/AlOx stack was suppressed below 1 pA at a gate voltage (VG) of 20 V.http://link.aip.org/link/doi/10.1063/1.4798303 |
| spellingShingle | Toshiyuki Kawaharamura Takayuki Uchida Masaru Sanada Mamoru Furuta Growth and electrical properties of AlOx grown by mist chemical vapor deposition AIP Advances |
| title | Growth and electrical properties of AlOx grown by mist chemical vapor deposition |
| title_full | Growth and electrical properties of AlOx grown by mist chemical vapor deposition |
| title_fullStr | Growth and electrical properties of AlOx grown by mist chemical vapor deposition |
| title_full_unstemmed | Growth and electrical properties of AlOx grown by mist chemical vapor deposition |
| title_short | Growth and electrical properties of AlOx grown by mist chemical vapor deposition |
| title_sort | growth and electrical properties of alox grown by mist chemical vapor deposition |
| url | http://link.aip.org/link/doi/10.1063/1.4798303 |
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