Growth and electrical properties of AlOx grown by mist chemical vapor deposition
Aluminum oxide (AlOx) thin films were grown using aluminum acetylacetonate (Al(acac)3) as a source solute by mist chemical vapor deposition (mist CVD). The AlOx thin films grown at temperatures above 400°C exhibited a breakdown field (EBD) over 6 MV/cm and a dielectric constant (κ) over 6. It is sug...
| Κύριοι συγγραφείς: | , , , |
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| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
AIP Publishing LLC
2013-03-01
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| Σειρά: | AIP Advances |
| Διαθέσιμο Online: | http://link.aip.org/link/doi/10.1063/1.4798303 |