N‐Type Single Walled Carbon Nanotube Thin Film Transistors Using Green Tri‐Layer Polymer Dielectric

Abstract The proliferation of disposable, wearable, and implantable printable electronics requires the development of high‐performance biodegradable, and sustainable electronic components. Often green materials don't have the necessary properties for high‐performance electronics, therefore obta...

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Main Authors: Mathieu N. Tousignant, Bahar Ronnasi, Vanessa Tischler, Benoît H. Lessard
Format: Article
Language:English
Published: Wiley-VCH 2023-05-01
Series:Advanced Materials Interfaces
Subjects:
Online Access:https://doi.org/10.1002/admi.202300079
_version_ 1797772553440198656
author Mathieu N. Tousignant
Bahar Ronnasi
Vanessa Tischler
Benoît H. Lessard
author_facet Mathieu N. Tousignant
Bahar Ronnasi
Vanessa Tischler
Benoît H. Lessard
author_sort Mathieu N. Tousignant
collection DOAJ
description Abstract The proliferation of disposable, wearable, and implantable printable electronics requires the development of high‐performance biodegradable, and sustainable electronic components. Often green materials don't have the necessary properties for high‐performance electronics, therefore obtaining the ideal properties requires a combination of multiple green materials. A tri‐layer dielectric is reported using poly(lactic acid) (PLA), poly(vinyl alcohol)/cellulose nanocrystals (PVAc), and toluene diisocyanate terminated poly(caprolactone) (TPCL), which is integrated into semiconducting single‐walled carbon nanotube (sc‐SWCNT) based thin film transistors (TFTs) in a top gate bottom contact architecture. The PVA provides a high dielectric constant due to the hydroxy groups, the cellulose is used to optimize the viscosity, the TPCL layer provides a robust hydrophobic surface, and the PLA eliminates the interfacial charge traps present in the PVAc and improves the adhesion between PVAc and the substrate. This leads to a decrease in leakage currents and reduces the polarity at the dielectric/semiconductor interface. The TFTs fabricated using tri‐layer dielectrics led to air‐stable n‐type devices with higher overall performance when compared against the PVAc/TPCL bilayer devices.
first_indexed 2024-03-12T21:53:36Z
format Article
id doaj.art-db91ad79d4de40d7bfbe05c18bf3690b
institution Directory Open Access Journal
issn 2196-7350
language English
last_indexed 2024-03-12T21:53:36Z
publishDate 2023-05-01
publisher Wiley-VCH
record_format Article
series Advanced Materials Interfaces
spelling doaj.art-db91ad79d4de40d7bfbe05c18bf3690b2023-07-26T01:35:26ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-05-011014n/an/a10.1002/admi.202300079N‐Type Single Walled Carbon Nanotube Thin Film Transistors Using Green Tri‐Layer Polymer DielectricMathieu N. Tousignant0Bahar Ronnasi1Vanessa Tischler2Benoît H. Lessard3University of Ottawa Department of Chemical and Biological Engineering 161 Louis Pasteur Ottawa ON K1N 6N5 CanadaUniversity of Ottawa Department of Chemical and Biological Engineering 161 Louis Pasteur Ottawa ON K1N 6N5 CanadaUniversity of Ottawa Department of Chemical and Biological Engineering 161 Louis Pasteur Ottawa ON K1N 6N5 CanadaUniversity of Ottawa Department of Chemical and Biological Engineering 161 Louis Pasteur Ottawa ON K1N 6N5 CanadaAbstract The proliferation of disposable, wearable, and implantable printable electronics requires the development of high‐performance biodegradable, and sustainable electronic components. Often green materials don't have the necessary properties for high‐performance electronics, therefore obtaining the ideal properties requires a combination of multiple green materials. A tri‐layer dielectric is reported using poly(lactic acid) (PLA), poly(vinyl alcohol)/cellulose nanocrystals (PVAc), and toluene diisocyanate terminated poly(caprolactone) (TPCL), which is integrated into semiconducting single‐walled carbon nanotube (sc‐SWCNT) based thin film transistors (TFTs) in a top gate bottom contact architecture. The PVA provides a high dielectric constant due to the hydroxy groups, the cellulose is used to optimize the viscosity, the TPCL layer provides a robust hydrophobic surface, and the PLA eliminates the interfacial charge traps present in the PVAc and improves the adhesion between PVAc and the substrate. This leads to a decrease in leakage currents and reduces the polarity at the dielectric/semiconductor interface. The TFTs fabricated using tri‐layer dielectrics led to air‐stable n‐type devices with higher overall performance when compared against the PVAc/TPCL bilayer devices.https://doi.org/10.1002/admi.202300079encapsulationgreen tri‐layer dielectricinterface engineeringn‐typesingle‐walled carbon nanotubessurface modification
spellingShingle Mathieu N. Tousignant
Bahar Ronnasi
Vanessa Tischler
Benoît H. Lessard
N‐Type Single Walled Carbon Nanotube Thin Film Transistors Using Green Tri‐Layer Polymer Dielectric
Advanced Materials Interfaces
encapsulation
green tri‐layer dielectric
interface engineering
n‐type
single‐walled carbon nanotubes
surface modification
title N‐Type Single Walled Carbon Nanotube Thin Film Transistors Using Green Tri‐Layer Polymer Dielectric
title_full N‐Type Single Walled Carbon Nanotube Thin Film Transistors Using Green Tri‐Layer Polymer Dielectric
title_fullStr N‐Type Single Walled Carbon Nanotube Thin Film Transistors Using Green Tri‐Layer Polymer Dielectric
title_full_unstemmed N‐Type Single Walled Carbon Nanotube Thin Film Transistors Using Green Tri‐Layer Polymer Dielectric
title_short N‐Type Single Walled Carbon Nanotube Thin Film Transistors Using Green Tri‐Layer Polymer Dielectric
title_sort n type single walled carbon nanotube thin film transistors using green tri layer polymer dielectric
topic encapsulation
green tri‐layer dielectric
interface engineering
n‐type
single‐walled carbon nanotubes
surface modification
url https://doi.org/10.1002/admi.202300079
work_keys_str_mv AT mathieuntousignant ntypesinglewalledcarbonnanotubethinfilmtransistorsusinggreentrilayerpolymerdielectric
AT baharronnasi ntypesinglewalledcarbonnanotubethinfilmtransistorsusinggreentrilayerpolymerdielectric
AT vanessatischler ntypesinglewalledcarbonnanotubethinfilmtransistorsusinggreentrilayerpolymerdielectric
AT benoithlessard ntypesinglewalledcarbonnanotubethinfilmtransistorsusinggreentrilayerpolymerdielectric