Efficient Diode Performance with Improved Effective Carrier Lifetime and Absorption Using Bismuth Nanoparticles Passivated Silicon Nanowires

Efficient Diode Performance with Improved Effective Carrier Lifetime and Absorption Using Bismuth Nanoparticles Passivated Silicon Nanowires

In this paper, we report a novel design of bismuth nanoparticle-passivated silicon nanowire (Bi@SiNW) heterojunction composites for high diode performances and improved effective carrier lifetime and absorption properties. High-density vertically aligned SiNWs were fabricated using a simple and cost...

ver descrição completa

Detalhes bibliográficos
Main Authors: Mariem Naffeti, Mohamed Ali Zaïbi, Alejandro Vidal García-Arias, Radhouane Chtourou, Pablo Aitor Postigo
Formato: Artigo
Idioma:English
Publicado em: MDPI AG 2022-10-01
Colecção:Nanomaterials
Assuntos:
Si nanowires
Bi nanoparticles
surface passivation
Schottky diode
minority carrier lifetime
absorption
Acesso em linha:https://www.mdpi.com/2079-4991/12/21/3729

Internet

https://www.mdpi.com/2079-4991/12/21/3729

Registos relacionados