Economical Silicon Nanowire Growth via Cooling Controlled Solid–Liquid–Solid Mechanism
Abstract Conventional vapor–liquid–solid mechanism of nanowire growth opens up new opportunities of fabricating nanowires with controllable morphologies and aspect ratios. However, gaseous precursors have disadvantages of high material and processing cost, high toxicity, and limited scalability. By...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-02-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202202247 |
| _version_ | 1827855432652161024 |
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| author | Thao Nguyen Chu‐Hsiu Hsu Der‐Hsien Lien Yu‐Sheng Su |
| author_facet | Thao Nguyen Chu‐Hsiu Hsu Der‐Hsien Lien Yu‐Sheng Su |
| author_sort | Thao Nguyen |
| collection | DOAJ |
| description | Abstract Conventional vapor–liquid–solid mechanism of nanowire growth opens up new opportunities of fabricating nanowires with controllable morphologies and aspect ratios. However, gaseous precursors have disadvantages of high material and processing cost, high toxicity, and limited scalability. By contrast, synthesizing nanowires via solid–liquid–solid mechanism could be a facile alternative since the low cost and nontoxic solid precursor is adopted in the process. In this study, the cooling control is found to be very critical for the solid–liquid–solid nanowire growth. Without a sufficient negative vertical temperature gradient, the nucleation and continuous growth of silicon nanowires could not occur. High volume gas flow cooling, fluctuating the heating temperature, decreasing the cooling rate, and applying a heat sink are all efficacious to promote silicon nanowire formation. In addition to the nanowires formed under high gas flow cooling on the silicon wafer sputtered with a nickel thin film, the solid–liquid–solid mechanism‐derived silicon nanowire growth can also be economically achieved by adopting a solution‐based coating of a nickel precursor onto the silicon substrate paired with a programmed slow cooling condition without using any gas, which could be transferred to other eutectic systems for cost‐effective nanomaterial fabrication. |
| first_indexed | 2024-03-12T11:51:01Z |
| format | Article |
| id | doaj.art-dbc4a5afaa1e4da3bcb2cd7b5b3f047c |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T11:51:01Z |
| publishDate | 2023-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-dbc4a5afaa1e4da3bcb2cd7b5b3f047c2023-08-31T09:02:04ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-02-01106n/an/a10.1002/admi.202202247Economical Silicon Nanowire Growth via Cooling Controlled Solid–Liquid–Solid MechanismThao Nguyen0Chu‐Hsiu Hsu1Der‐Hsien Lien2Yu‐Sheng Su3International College of Semiconductor Technology National Yang Ming Chiao Tung University 1001 University Road Hsinchu 30010 TaiwanInstitute of Electronics College of Electrical and Computer Engineering National Yang Ming Chiao Tung University 1001 University Road Hsinchu 30010 TaiwanInstitute of Electronics College of Electrical and Computer Engineering National Yang Ming Chiao Tung University 1001 University Road Hsinchu 30010 TaiwanInternational College of Semiconductor Technology National Yang Ming Chiao Tung University 1001 University Road Hsinchu 30010 TaiwanAbstract Conventional vapor–liquid–solid mechanism of nanowire growth opens up new opportunities of fabricating nanowires with controllable morphologies and aspect ratios. However, gaseous precursors have disadvantages of high material and processing cost, high toxicity, and limited scalability. By contrast, synthesizing nanowires via solid–liquid–solid mechanism could be a facile alternative since the low cost and nontoxic solid precursor is adopted in the process. In this study, the cooling control is found to be very critical for the solid–liquid–solid nanowire growth. Without a sufficient negative vertical temperature gradient, the nucleation and continuous growth of silicon nanowires could not occur. High volume gas flow cooling, fluctuating the heating temperature, decreasing the cooling rate, and applying a heat sink are all efficacious to promote silicon nanowire formation. In addition to the nanowires formed under high gas flow cooling on the silicon wafer sputtered with a nickel thin film, the solid–liquid–solid mechanism‐derived silicon nanowire growth can also be economically achieved by adopting a solution‐based coating of a nickel precursor onto the silicon substrate paired with a programmed slow cooling condition without using any gas, which could be transferred to other eutectic systems for cost‐effective nanomaterial fabrication.https://doi.org/10.1002/admi.202202247amorphous silicon nanowirenanomaterialsnickel oxidenickel‐silicon alloyvapor–liquid–solid |
| spellingShingle | Thao Nguyen Chu‐Hsiu Hsu Der‐Hsien Lien Yu‐Sheng Su Economical Silicon Nanowire Growth via Cooling Controlled Solid–Liquid–Solid Mechanism Advanced Materials Interfaces amorphous silicon nanowire nanomaterials nickel oxide nickel‐silicon alloy vapor–liquid–solid |
| title | Economical Silicon Nanowire Growth via Cooling Controlled Solid–Liquid–Solid Mechanism |
| title_full | Economical Silicon Nanowire Growth via Cooling Controlled Solid–Liquid–Solid Mechanism |
| title_fullStr | Economical Silicon Nanowire Growth via Cooling Controlled Solid–Liquid–Solid Mechanism |
| title_full_unstemmed | Economical Silicon Nanowire Growth via Cooling Controlled Solid–Liquid–Solid Mechanism |
| title_short | Economical Silicon Nanowire Growth via Cooling Controlled Solid–Liquid–Solid Mechanism |
| title_sort | economical silicon nanowire growth via cooling controlled solid liquid solid mechanism |
| topic | amorphous silicon nanowire nanomaterials nickel oxide nickel‐silicon alloy vapor–liquid–solid |
| url | https://doi.org/10.1002/admi.202202247 |
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