Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation

Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation

<p>Abstract</p><p>By thermal evaporation of pure ZnO powders, high-density vertical-aligned ZnO nanorod arrays with diameter ranged in 80&#8211;250 nm were successfully synthesized on Si substrates covered with ZnO seed layers. It was revealed that the morphology, orientation,...

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Bibliographic Details
Main Authors: Jiang Y, Wang H, Zhang ZP, Wang XN, Mo Q, Wang Y, Zhu JH, Wang HB, Yang FJ
Format: Article
Language:English
Published: SpringerOpen 2008-01-01
Series:Nanoscale Research Letters
Subjects:
ZnO
Thermal evaporation
Nanorod arrays
Seed layer
Catalyst-free
Online Access:http://dx.doi.org/10.1007/s11671-008-9156-y
Description
Summary:<p>Abstract</p><p>By thermal evaporation of pure ZnO powders, high-density vertical-aligned ZnO nanorod arrays with diameter ranged in 80&#8211;250 nm were successfully synthesized on Si substrates covered with ZnO seed layers. It was revealed that the morphology, orientation, crystal, and optical quality of the ZnO nanorod arrays highly depend on the crystal quality of ZnO seed layers, which was confirmed by the characterizations of field-emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and photoluminescence measurements. For ZnO seed layer with wurtzite structure, the ZnO nanorods grew exactly normal to the substrate with perfect wurtzite structure, strong near-band-edge emission, and neglectable deep-level emission. The nanorods synthesized on the polycrystalline ZnO seed layer presented random orientation, wide diameter, and weak deep-level emission. This article provides a C-free and Au-free method for large-scale synthesis of vertical-aligned ZnO nanorod arrays by controlling the crystal quality of the seed layer.</p>
ISSN:1931-7573
1556-276X

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