Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays

The brain performs intelligent tasks with extremely low energy consumption. This work takes its inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions and reliance on low-precision computation. The emergen...

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Main Authors: Tifenn Hirtzlin, Marc Bocquet, Bogdan Penkovsky, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, Damien Querlioz
Format: Article
Language:English
Published: Frontiers Media S.A. 2020-01-01
Series:Frontiers in Neuroscience
Subjects:
Online Access:https://www.frontiersin.org/article/10.3389/fnins.2019.01383/full
_version_ 1818849131748130816
author Tifenn Hirtzlin
Marc Bocquet
Bogdan Penkovsky
Jacques-Olivier Klein
Etienne Nowak
Elisa Vianello
Jean-Michel Portal
Damien Querlioz
author_facet Tifenn Hirtzlin
Marc Bocquet
Bogdan Penkovsky
Jacques-Olivier Klein
Etienne Nowak
Elisa Vianello
Jean-Michel Portal
Damien Querlioz
author_sort Tifenn Hirtzlin
collection DOAJ
description The brain performs intelligent tasks with extremely low energy consumption. This work takes its inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions and reliance on low-precision computation. The emergence of resistive memory technologies indeed provides an opportunity to tightly co-integrate logic and memory in hardware. In parallel, the recently proposed concept of a Binarized Neural Network, where multiplications are replaced by exclusive NOR (XNOR) logic gates, offers a way to implement artificial intelligence using very low precision computation. In this work, we therefore propose a strategy for implementing low-energy Binarized Neural Networks that employs brain-inspired concepts while retaining the energy benefits of digital electronics. We design, fabricate, and test a memory array, including periphery and sensing circuits, that is optimized for this in-memory computing scheme. Our circuit employs hafnium oxide resistive memory integrated in the back end of line of a 130-nm CMOS process, in a two-transistor, two-resistor cell, which allows the exclusive NOR operations of the neural network to be performed directly within the sense amplifiers. We show, based on extensive electrical measurements, that our design allows a reduction in the number of bit errors on the synaptic weights without the use of formal error-correcting codes. We design a whole system using this memory array. We show on standard machine learning tasks (MNIST, CIFAR-10, ImageNet, and an ECG task) that the system has inherent resilience to bit errors. We evidence that its energy consumption is attractive compared to more standard approaches and that it can use memory devices in regimes where they exhibit particularly low programming energy and high endurance. We conclude the work by discussing how it associates biologically plausible ideas with more traditional digital electronics concepts.
first_indexed 2024-12-19T06:28:22Z
format Article
id doaj.art-dbd1743fa64545fea508526d5b5e607c
institution Directory Open Access Journal
issn 1662-453X
language English
last_indexed 2024-12-19T06:28:22Z
publishDate 2020-01-01
publisher Frontiers Media S.A.
record_format Article
series Frontiers in Neuroscience
spelling doaj.art-dbd1743fa64545fea508526d5b5e607c2022-12-21T20:32:28ZengFrontiers Media S.A.Frontiers in Neuroscience1662-453X2020-01-011310.3389/fnins.2019.01383489982Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory ArraysTifenn Hirtzlin0Marc Bocquet1Bogdan Penkovsky2Jacques-Olivier Klein3Etienne Nowak4Elisa Vianello5Jean-Michel Portal6Damien Querlioz7C2N, Univ Paris-Sud, Université Paris-Saclay, CNRS, Palaiseau, FranceAix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, FranceC2N, Univ Paris-Sud, Université Paris-Saclay, CNRS, Palaiseau, FranceC2N, Univ Paris-Sud, Université Paris-Saclay, CNRS, Palaiseau, FranceCEA, LETI, Grenoble, FranceCEA, LETI, Grenoble, FranceAix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, FranceC2N, Univ Paris-Sud, Université Paris-Saclay, CNRS, Palaiseau, FranceThe brain performs intelligent tasks with extremely low energy consumption. This work takes its inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions and reliance on low-precision computation. The emergence of resistive memory technologies indeed provides an opportunity to tightly co-integrate logic and memory in hardware. In parallel, the recently proposed concept of a Binarized Neural Network, where multiplications are replaced by exclusive NOR (XNOR) logic gates, offers a way to implement artificial intelligence using very low precision computation. In this work, we therefore propose a strategy for implementing low-energy Binarized Neural Networks that employs brain-inspired concepts while retaining the energy benefits of digital electronics. We design, fabricate, and test a memory array, including periphery and sensing circuits, that is optimized for this in-memory computing scheme. Our circuit employs hafnium oxide resistive memory integrated in the back end of line of a 130-nm CMOS process, in a two-transistor, two-resistor cell, which allows the exclusive NOR operations of the neural network to be performed directly within the sense amplifiers. We show, based on extensive electrical measurements, that our design allows a reduction in the number of bit errors on the synaptic weights without the use of formal error-correcting codes. We design a whole system using this memory array. We show on standard machine learning tasks (MNIST, CIFAR-10, ImageNet, and an ECG task) that the system has inherent resilience to bit errors. We evidence that its energy consumption is attractive compared to more standard approaches and that it can use memory devices in regimes where they exhibit particularly low programming energy and high endurance. We conclude the work by discussing how it associates biologically plausible ideas with more traditional digital electronics concepts.https://www.frontiersin.org/article/10.3389/fnins.2019.01383/fullbinarized neural networksresistive memorymemristorin-memory computingbiologically plausible digital electronicsASICs
spellingShingle Tifenn Hirtzlin
Marc Bocquet
Bogdan Penkovsky
Jacques-Olivier Klein
Etienne Nowak
Elisa Vianello
Jean-Michel Portal
Damien Querlioz
Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays
Frontiers in Neuroscience
binarized neural networks
resistive memory
memristor
in-memory computing
biologically plausible digital electronics
ASICs
title Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays
title_full Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays
title_fullStr Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays
title_full_unstemmed Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays
title_short Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays
title_sort digital biologically plausible implementation of binarized neural networks with differential hafnium oxide resistive memory arrays
topic binarized neural networks
resistive memory
memristor
in-memory computing
biologically plausible digital electronics
ASICs
url https://www.frontiersin.org/article/10.3389/fnins.2019.01383/full
work_keys_str_mv AT tifennhirtzlin digitalbiologicallyplausibleimplementationofbinarizedneuralnetworkswithdifferentialhafniumoxideresistivememoryarrays
AT marcbocquet digitalbiologicallyplausibleimplementationofbinarizedneuralnetworkswithdifferentialhafniumoxideresistivememoryarrays
AT bogdanpenkovsky digitalbiologicallyplausibleimplementationofbinarizedneuralnetworkswithdifferentialhafniumoxideresistivememoryarrays
AT jacquesolivierklein digitalbiologicallyplausibleimplementationofbinarizedneuralnetworkswithdifferentialhafniumoxideresistivememoryarrays
AT etiennenowak digitalbiologicallyplausibleimplementationofbinarizedneuralnetworkswithdifferentialhafniumoxideresistivememoryarrays
AT elisavianello digitalbiologicallyplausibleimplementationofbinarizedneuralnetworkswithdifferentialhafniumoxideresistivememoryarrays
AT jeanmichelportal digitalbiologicallyplausibleimplementationofbinarizedneuralnetworkswithdifferentialhafniumoxideresistivememoryarrays
AT damienquerlioz digitalbiologicallyplausibleimplementationofbinarizedneuralnetworkswithdifferentialhafniumoxideresistivememoryarrays