First-principles calculation of P-type Mg3Sb2 thermoelectric performance modification by Ge and Si doping
Mg3Sb2 has been considered a highly promising thermoelectric material for mid-temperature applications. Optimizing the properties of the material is crucial for accelerating its commercial use. In this work, first-principles molecular simulations of P-type Mg3Sb2 doped with the carbon group elements...
| Những tác giả chính: | , , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
AIP Publishing LLC
2024-05-01
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| Loạt: | AIP Advances |
| Truy cập trực tuyến: | http://dx.doi.org/10.1063/5.0205337 |