Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses
With the electromagnetic environment becoming increasingly complex, it is crucial to address the risk posed by electromagnetic pulse, which critically impairs the performance and reliability of electronic systems based on complementary metal oxide semiconductor (CMOS) image sensors. In this context,...
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| Format: | Article |
| Language: | English |
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The Korean Institute of Electromagnetic Engineering and Science
2024-03-01
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| Series: | Journal of Electromagnetic Engineering and Science |
| Subjects: | |
| Online Access: | https://www.jees.kr/upload/pdf/jees-2024-2-r-215.pdf |
| _version_ | 1797213559412752384 |
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| author | Zhikang Yang Lin Wen Yudong Li Dong Zhou Xin Wang Rui Ding Meiqing Zhong Cui Meng Wenxiao Fang Qi Guo |
| author_facet | Zhikang Yang Lin Wen Yudong Li Dong Zhou Xin Wang Rui Ding Meiqing Zhong Cui Meng Wenxiao Fang Qi Guo |
| author_sort | Zhikang Yang |
| collection | DOAJ |
| description | With the electromagnetic environment becoming increasingly complex, it is crucial to address the risk posed by electromagnetic pulse, which critically impairs the performance and reliability of electronic systems based on complementary metal oxide semiconductor (CMOS) image sensors. In this context, research on the failure types of CMOS image sensors in a high-power electromagnetic environment, caused by strong electromagnetic pulses and the rapid evaluation method of interference immunity, has garnered significant interest. This paper conducts electromagnetic pulse simulation experiments on CMOS image sensors to first study their failure types, such as image abnormalities and functional interruption, and then identify the corresponding failure criteria. Furthermore, this study builds on the small sample test evaluation method to investigate the interference threshold of functional interruptions in CMOS image sensors by calculating the failure probability at different field strengths. The obtained data were combined with the Weibull distribution function for fitting, the results of which found the interference threshold to be at 40.4 kV/m. The findings of this study provide a basis for evaluating the survivability of CMOS image sensors and their associated reinforcement technology in high-power electromagnetic environments. |
| first_indexed | 2024-04-24T11:00:12Z |
| format | Article |
| id | doaj.art-dbd50d36ca724e57a96f5faf5a837493 |
| institution | Directory Open Access Journal |
| issn | 2671-7255 2671-7263 |
| language | English |
| last_indexed | 2024-04-24T11:00:12Z |
| publishDate | 2024-03-01 |
| publisher | The Korean Institute of Electromagnetic Engineering and Science |
| record_format | Article |
| series | Journal of Electromagnetic Engineering and Science |
| spelling | doaj.art-dbd50d36ca724e57a96f5faf5a8374932024-04-12T04:10:31ZengThe Korean Institute of Electromagnetic Engineering and ScienceJournal of Electromagnetic Engineering and Science2671-72552671-72632024-03-0124215116010.26866/jees.2024.2.r.2153653Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic PulsesZhikang Yang0Lin Wen1Yudong Li2Dong Zhou3Xin Wang4Rui Ding5Meiqing Zhong6Cui Meng7Wenxiao Fang8Qi Guo9 State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Urumqi, China State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Urumqi, China State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Urumqi, China State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Urumqi, China State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Urumqi, China China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China Department of Engineering Physics, Tsinghua University, Beijing, China Department of Engineering Physics, Tsinghua University, Beijing, China China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Urumqi, ChinaWith the electromagnetic environment becoming increasingly complex, it is crucial to address the risk posed by electromagnetic pulse, which critically impairs the performance and reliability of electronic systems based on complementary metal oxide semiconductor (CMOS) image sensors. In this context, research on the failure types of CMOS image sensors in a high-power electromagnetic environment, caused by strong electromagnetic pulses and the rapid evaluation method of interference immunity, has garnered significant interest. This paper conducts electromagnetic pulse simulation experiments on CMOS image sensors to first study their failure types, such as image abnormalities and functional interruption, and then identify the corresponding failure criteria. Furthermore, this study builds on the small sample test evaluation method to investigate the interference threshold of functional interruptions in CMOS image sensors by calculating the failure probability at different field strengths. The obtained data were combined with the Weibull distribution function for fitting, the results of which found the interference threshold to be at 40.4 kV/m. The findings of this study provide a basis for evaluating the survivability of CMOS image sensors and their associated reinforcement technology in high-power electromagnetic environments.https://www.jees.kr/upload/pdf/jees-2024-2-r-215.pdfcmos image sensorelectromagnetic pulsefailure typeinterference threshold |
| spellingShingle | Zhikang Yang Lin Wen Yudong Li Dong Zhou Xin Wang Rui Ding Meiqing Zhong Cui Meng Wenxiao Fang Qi Guo Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses Journal of Electromagnetic Engineering and Science cmos image sensor electromagnetic pulse failure type interference threshold |
| title | Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses |
| title_full | Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses |
| title_fullStr | Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses |
| title_full_unstemmed | Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses |
| title_short | Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses |
| title_sort | analysis of the interference effects in cmos image sensors caused by strong electromagnetic pulses |
| topic | cmos image sensor electromagnetic pulse failure type interference threshold |
| url | https://www.jees.kr/upload/pdf/jees-2024-2-r-215.pdf |
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