Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses

Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses

With the electromagnetic environment becoming increasingly complex, it is crucial to address the risk posed by electromagnetic pulse, which critically impairs the performance and reliability of electronic systems based on complementary metal oxide semiconductor (CMOS) image sensors. In this context,...

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Bibliographic Details
Main Authors: Zhikang Yang, Lin Wen, Yudong Li, Dong Zhou, Xin Wang, Rui Ding, Meiqing Zhong, Cui Meng, Wenxiao Fang, Qi Guo
Format: Article
Language:English
Published: The Korean Institute of Electromagnetic Engineering and Science 2024-03-01
Series:Journal of Electromagnetic Engineering and Science
Subjects:
cmos image sensor
electromagnetic pulse
failure type
interference threshold
Online Access:https://www.jees.kr/upload/pdf/jees-2024-2-r-215.pdf

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