Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation
Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-I...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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VINCA Institute of Nuclear Sciences
2014-01-01
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| Series: | Nuclear Technology and Radiation Protection |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941401046O.pdf |
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| author | OO Myo Min Rashid Nahrul Khair Bin Alang Md Karim Julia Bin Abdul Mohamed Zin Muhammad Rawi Bin Rahim Rosminazuin Bt.Ab. Azman Amelia Wong Hasbullah Nurul Fadzlin |
| author_facet | OO Myo Min Rashid Nahrul Khair Bin Alang Md Karim Julia Bin Abdul Mohamed Zin Muhammad Rawi Bin Rahim Rosminazuin Bt.Ab. Azman Amelia Wong Hasbullah Nurul Fadzlin |
| author_sort | OO Myo Min |
| collection | DOAJ |
| description | Electronics components such as bipolar junction transistors, diodes, etc.
which are used in deep space mission are required to be tolerant to
extensive exposure to energetic neutrons and ionizing radiation. This paper
examines neutron radiation with pneumatic transfer system of TRIGA Mark-II
reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation
from Co-60 on silicon NPN bipolar junction transistors is also be examined.
Analyses on irradiated transistors were performed in terms of the
electrical characteristics such as current gain, collector current and base
current. Experimental results showed that the current gain on the devices
degraded significantly after neutron and gamma radiations. Neutron radiation
can cause displacement damage in the bulk layer of the transistor structure
and gamma radiation can induce ionizing damage in the oxide layer of
emitter-base depletion layer. The current gain degradation is believed to be
governed by the increasing recombination current in the base-emitter
depletion region. |
| first_indexed | 2024-12-22T17:00:46Z |
| format | Article |
| id | doaj.art-dbea3a36a7a444fba6fe081f789333d0 |
| institution | Directory Open Access Journal |
| issn | 1451-3994 |
| language | English |
| last_indexed | 2024-12-22T17:00:46Z |
| publishDate | 2014-01-01 |
| publisher | VINCA Institute of Nuclear Sciences |
| record_format | Article |
| series | Nuclear Technology and Radiation Protection |
| spelling | doaj.art-dbea3a36a7a444fba6fe081f789333d02022-12-21T18:19:20ZengVINCA Institute of Nuclear SciencesNuclear Technology and Radiation Protection1451-39942014-01-01291465210.2298/NTRP1401046O1451-39941401046OElectrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiationOO Myo Min0Rashid Nahrul Khair Bin Alang Md1Karim Julia Bin Abdul2Mohamed Zin Muhammad Rawi Bin3Rahim Rosminazuin Bt.Ab.4Azman Amelia Wong5Hasbullah Nurul Fadzlin6Department of Electrical and Computer Engineering, International Islamic University, Kuala Lumpur, MalaysiaDepartment of Mechatronics Engineering, International Islamic University, Kuala Lumpur, MalaysiaNuclear Power Sector, Malaysian Nuclear Agency, Kuala Lumpur, MalaysiaDepartment of Electrical and Computer Engineering, International Islamic University, Kuala Lumpur, MalaysiaDepartment of Electrical and Computer Engineering, International Islamic University, Kuala Lumpur, MalaysiaDepartment of Electrical and Computer Engineering, International Islamic University, Kuala Lumpur, MalaysiaDepartment of Electrical and Computer Engineering, International Islamic University, Kuala Lumpur, MalaysiaElectronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irradiated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by the increasing recombination current in the base-emitter depletion region.http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941401046O.pdfbipolar junction transistordisplacement damageionizing damagerecombination current |
| spellingShingle | OO Myo Min Rashid Nahrul Khair Bin Alang Md Karim Julia Bin Abdul Mohamed Zin Muhammad Rawi Bin Rahim Rosminazuin Bt.Ab. Azman Amelia Wong Hasbullah Nurul Fadzlin Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation Nuclear Technology and Radiation Protection bipolar junction transistor displacement damage ionizing damage recombination current |
| title | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_full | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_fullStr | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_full_unstemmed | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_short | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_sort | electrical characterization of commercial npn bipolar junction transistors under neutron and gamma irradiation |
| topic | bipolar junction transistor displacement damage ionizing damage recombination current |
| url | http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941401046O.pdf |
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