Flexible Sol-Gel—Processed Y<sub>2</sub>O<sub>3</sub> RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

Flexible Sol-Gel—Processed Y<sub>2</sub>O<sub>3</sub> RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

Flexible indium tin oxide (ITO)/Y<sub>2</sub>O<sub>3</sub>/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical proc...

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Bibliographic Details
Main Authors: Hyeon-Joong Kim, Do-Won Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jaewon Jang
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Materials
Subjects:
sol-gel
Y<sub>2</sub>O<sub>3</sub>
RRAM
UV/ozone
photochemical
flexible
Online Access:https://www.mdpi.com/1996-1944/15/5/1899

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https://www.mdpi.com/1996-1944/15/5/1899

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