Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers
Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2023-01-01
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| Series: | Journal of the European Optical Society-Rapid Publications |
| Subjects: | |
| Online Access: | https://jeos.edpsciences.org/articles/jeos/full_html/2023/01/jeos20230010/jeos20230010.html |
| _version_ | 1797835266769027072 |
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| author | Ermilova Elena Weise Matthias Hertwig Andreas |
| author_facet | Ermilova Elena Weise Matthias Hertwig Andreas |
| author_sort | Ermilova Elena |
| collection | DOAJ |
| description | Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control. |
| first_indexed | 2024-04-09T14:51:25Z |
| format | Article |
| id | doaj.art-dc0c0acdecc4478181f1d2267b7bc6b8 |
| institution | Directory Open Access Journal |
| issn | 1990-2573 |
| language | English |
| last_indexed | 2024-04-09T14:51:25Z |
| publishDate | 2023-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | Journal of the European Optical Society-Rapid Publications |
| spelling | doaj.art-dc0c0acdecc4478181f1d2267b7bc6b82023-05-02T09:33:41ZengEDP SciencesJournal of the European Optical Society-Rapid Publications1990-25732023-01-011912310.1051/jeos/2023018jeos20230010Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layersErmilova Elena0Weise Matthias1Hertwig Andreas2Bundesanstalt für Materialforschung und -prüfung (BAM), Division 6.1 Surface Analysis and Interfacial ChemistryBundesanstalt für Materialforschung und -prüfung (BAM), Division 6.1 Surface Analysis and Interfacial ChemistryBundesanstalt für Materialforschung und -prüfung (BAM), Division 6.1 Surface Analysis and Interfacial ChemistryCritical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.https://jeos.edpsciences.org/articles/jeos/full_html/2023/01/jeos20230010/jeos20230010.htmlimaging ellipsometrywhite light interference microscopy4h–sicdefects |
| spellingShingle | Ermilova Elena Weise Matthias Hertwig Andreas Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers Journal of the European Optical Society-Rapid Publications imaging ellipsometry white light interference microscopy 4h–sic defects |
| title | Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers |
| title_full | Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers |
| title_fullStr | Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers |
| title_full_unstemmed | Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers |
| title_short | Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers |
| title_sort | application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4h sic layers |
| topic | imaging ellipsometry white light interference microscopy 4h–sic defects |
| url | https://jeos.edpsciences.org/articles/jeos/full_html/2023/01/jeos20230010/jeos20230010.html |
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