Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te

Topological crystalline insulators form a class of semiconductors for which surface electron states with the Dirac dispersion relation are formed on surfaces with a certain crystallographic orientation. Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te al...

Full description

Bibliographic Details
Main Authors: Alexandra V. Galeeva, Dmitry A. Belov, Aleksei S. Kazakov, Anton V. Ikonnikov, Alexey I. Artamkin, Ludmila I. Ryabova, Valentine V. Volobuev, Gunther Springholz, Sergey N. Danilov, Dmitry R. Khokhlov
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/12/3207
_version_ 1827670770587795456
author Alexandra V. Galeeva
Dmitry A. Belov
Aleksei S. Kazakov
Anton V. Ikonnikov
Alexey I. Artamkin
Ludmila I. Ryabova
Valentine V. Volobuev
Gunther Springholz
Sergey N. Danilov
Dmitry R. Khokhlov
author_facet Alexandra V. Galeeva
Dmitry A. Belov
Aleksei S. Kazakov
Anton V. Ikonnikov
Alexey I. Artamkin
Ludmila I. Ryabova
Valentine V. Volobuev
Gunther Springholz
Sergey N. Danilov
Dmitry R. Khokhlov
author_sort Alexandra V. Galeeva
collection DOAJ
description Topological crystalline insulators form a class of semiconductors for which surface electron states with the Dirac dispersion relation are formed on surfaces with a certain crystallographic orientation. Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te alloys belong to the topological crystalline phase when the SnTe content <i>x</i> exceeds 0.35, while they are in the trivial phase at <i>x</i> < 0.35. For the surface crystallographic orientation (111), the appearance of topologically nontrivial surface states is expected. We studied the photoelectromagnetic (PEM) effect induced by laser terahertz radiation in Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te films in the composition range <i>x</i> = (0.11–0.44), with the (111) surface crystallographic orientation. It was found that in the trivial phase, the amplitude of the PEM effect is determined by the power of the incident radiation, while in the topological phase, the amplitude is proportional to the flux of laser radiation quanta. A possible mechanism responsible for the effect observed presumes damping of the thermalization rate of photoexcited electrons in the topological phase and, consequently, prevailing of electron diffusion, compared with energy relaxation.
first_indexed 2024-03-10T03:27:44Z
format Article
id doaj.art-dc3ab8fd6e8546d99201bfe45e1023a5
institution Directory Open Access Journal
issn 2079-4991
language English
last_indexed 2024-03-10T03:27:44Z
publishDate 2021-11-01
publisher MDPI AG
record_format Article
series Nanomaterials
spelling doaj.art-dc3ab8fd6e8546d99201bfe45e1023a52023-11-23T09:49:24ZengMDPI AGNanomaterials2079-49912021-11-011112320710.3390/nano11123207Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>TeAlexandra V. Galeeva0Dmitry A. Belov1Aleksei S. Kazakov2Anton V. Ikonnikov3Alexey I. Artamkin4Ludmila I. Ryabova5Valentine V. Volobuev6Gunther Springholz7Sergey N. Danilov8Dmitry R. Khokhlov9Faculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University of Linz, 4040 Linz, AustriaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University of Linz, 4040 Linz, AustriaFaculty of Physics, University of Regensburg, 93053 Regensburg, GermanyFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaTopological crystalline insulators form a class of semiconductors for which surface electron states with the Dirac dispersion relation are formed on surfaces with a certain crystallographic orientation. Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te alloys belong to the topological crystalline phase when the SnTe content <i>x</i> exceeds 0.35, while they are in the trivial phase at <i>x</i> < 0.35. For the surface crystallographic orientation (111), the appearance of topologically nontrivial surface states is expected. We studied the photoelectromagnetic (PEM) effect induced by laser terahertz radiation in Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te films in the composition range <i>x</i> = (0.11–0.44), with the (111) surface crystallographic orientation. It was found that in the trivial phase, the amplitude of the PEM effect is determined by the power of the incident radiation, while in the topological phase, the amplitude is proportional to the flux of laser radiation quanta. A possible mechanism responsible for the effect observed presumes damping of the thermalization rate of photoexcited electrons in the topological phase and, consequently, prevailing of electron diffusion, compared with energy relaxation.https://www.mdpi.com/2079-4991/11/12/3207topological crystalline insulatorterahertz radiationphotoelectromagnetic effect
spellingShingle Alexandra V. Galeeva
Dmitry A. Belov
Aleksei S. Kazakov
Anton V. Ikonnikov
Alexey I. Artamkin
Ludmila I. Ryabova
Valentine V. Volobuev
Gunther Springholz
Sergey N. Danilov
Dmitry R. Khokhlov
Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te
Nanomaterials
topological crystalline insulator
terahertz radiation
photoelectromagnetic effect
title Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te
title_full Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te
title_fullStr Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te
title_full_unstemmed Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te
title_short Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te
title_sort photoelectromagnetic effect induced by terahertz laser radiation in topological crystalline insulators pb sub 1 i x i sub sn i sub x sub i te
topic topological crystalline insulator
terahertz radiation
photoelectromagnetic effect
url https://www.mdpi.com/2079-4991/11/12/3207
work_keys_str_mv AT alexandravgaleeva photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite
AT dmitryabelov photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite
AT alekseiskazakov photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite
AT antonvikonnikov photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite
AT alexeyiartamkin photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite
AT ludmilairyabova photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite
AT valentinevvolobuev photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite
AT guntherspringholz photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite
AT sergeyndanilov photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite
AT dmitryrkhokhlov photoelectromagneticeffectinducedbyterahertzlaserradiationintopologicalcrystallineinsulatorspbsub1ixisubsnisubxsubite