Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te
Topological crystalline insulators form a class of semiconductors for which surface electron states with the Dirac dispersion relation are formed on surfaces with a certain crystallographic orientation. Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te al...
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2021-11-01
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author | Alexandra V. Galeeva Dmitry A. Belov Aleksei S. Kazakov Anton V. Ikonnikov Alexey I. Artamkin Ludmila I. Ryabova Valentine V. Volobuev Gunther Springholz Sergey N. Danilov Dmitry R. Khokhlov |
author_facet | Alexandra V. Galeeva Dmitry A. Belov Aleksei S. Kazakov Anton V. Ikonnikov Alexey I. Artamkin Ludmila I. Ryabova Valentine V. Volobuev Gunther Springholz Sergey N. Danilov Dmitry R. Khokhlov |
author_sort | Alexandra V. Galeeva |
collection | DOAJ |
description | Topological crystalline insulators form a class of semiconductors for which surface electron states with the Dirac dispersion relation are formed on surfaces with a certain crystallographic orientation. Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te alloys belong to the topological crystalline phase when the SnTe content <i>x</i> exceeds 0.35, while they are in the trivial phase at <i>x</i> < 0.35. For the surface crystallographic orientation (111), the appearance of topologically nontrivial surface states is expected. We studied the photoelectromagnetic (PEM) effect induced by laser terahertz radiation in Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te films in the composition range <i>x</i> = (0.11–0.44), with the (111) surface crystallographic orientation. It was found that in the trivial phase, the amplitude of the PEM effect is determined by the power of the incident radiation, while in the topological phase, the amplitude is proportional to the flux of laser radiation quanta. A possible mechanism responsible for the effect observed presumes damping of the thermalization rate of photoexcited electrons in the topological phase and, consequently, prevailing of electron diffusion, compared with energy relaxation. |
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spelling | doaj.art-dc3ab8fd6e8546d99201bfe45e1023a52023-11-23T09:49:24ZengMDPI AGNanomaterials2079-49912021-11-011112320710.3390/nano11123207Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>TeAlexandra V. Galeeva0Dmitry A. Belov1Aleksei S. Kazakov2Anton V. Ikonnikov3Alexey I. Artamkin4Ludmila I. Ryabova5Valentine V. Volobuev6Gunther Springholz7Sergey N. Danilov8Dmitry R. Khokhlov9Faculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University of Linz, 4040 Linz, AustriaInstitute of Semiconductor and Solid State Physics, Johannes Kepler University of Linz, 4040 Linz, AustriaFaculty of Physics, University of Regensburg, 93053 Regensburg, GermanyFaculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, RussiaTopological crystalline insulators form a class of semiconductors for which surface electron states with the Dirac dispersion relation are formed on surfaces with a certain crystallographic orientation. Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te alloys belong to the topological crystalline phase when the SnTe content <i>x</i> exceeds 0.35, while they are in the trivial phase at <i>x</i> < 0.35. For the surface crystallographic orientation (111), the appearance of topologically nontrivial surface states is expected. We studied the photoelectromagnetic (PEM) effect induced by laser terahertz radiation in Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te films in the composition range <i>x</i> = (0.11–0.44), with the (111) surface crystallographic orientation. It was found that in the trivial phase, the amplitude of the PEM effect is determined by the power of the incident radiation, while in the topological phase, the amplitude is proportional to the flux of laser radiation quanta. A possible mechanism responsible for the effect observed presumes damping of the thermalization rate of photoexcited electrons in the topological phase and, consequently, prevailing of electron diffusion, compared with energy relaxation.https://www.mdpi.com/2079-4991/11/12/3207topological crystalline insulatorterahertz radiationphotoelectromagnetic effect |
spellingShingle | Alexandra V. Galeeva Dmitry A. Belov Aleksei S. Kazakov Anton V. Ikonnikov Alexey I. Artamkin Ludmila I. Ryabova Valentine V. Volobuev Gunther Springholz Sergey N. Danilov Dmitry R. Khokhlov Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te Nanomaterials topological crystalline insulator terahertz radiation photoelectromagnetic effect |
title | Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te |
title_full | Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te |
title_fullStr | Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te |
title_full_unstemmed | Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te |
title_short | Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>Te |
title_sort | photoelectromagnetic effect induced by terahertz laser radiation in topological crystalline insulators pb sub 1 i x i sub sn i sub x sub i te |
topic | topological crystalline insulator terahertz radiation photoelectromagnetic effect |
url | https://www.mdpi.com/2079-4991/11/12/3207 |
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