Modelling of High Quantum Efficiency Avalanche Photodiode
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and qu...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Iran University of Science and Technology
2019-12-01
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| Series: | Iranian Journal of Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://ijeee.iust.ac.ir/article-1-1295-en.html |
| _version_ | 1818322922642604032 |
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| author | T. Baldawi A. Abuelhaija |
| author_facet | T. Baldawi A. Abuelhaija |
| author_sort | T. Baldawi |
| collection | DOAJ |
| description | A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-length region 1.55μm where the Silica optical fiber has minimum attenuation loss. It has been found that at this wave-length and for the optimum device design the quantum efficiency approaches about 90%. |
| first_indexed | 2024-12-13T11:04:30Z |
| format | Article |
| id | doaj.art-dc7e0d969c524a9fa45daed55fd8ab97 |
| institution | Directory Open Access Journal |
| issn | 1735-2827 2383-3890 |
| language | English |
| last_indexed | 2024-12-13T11:04:30Z |
| publishDate | 2019-12-01 |
| publisher | Iran University of Science and Technology |
| record_format | Article |
| series | Iranian Journal of Electrical and Electronic Engineering |
| spelling | doaj.art-dc7e0d969c524a9fa45daed55fd8ab972022-12-21T23:49:06ZengIran University of Science and TechnologyIranian Journal of Electrical and Electronic Engineering1735-28272383-38902019-12-01154509515Modelling of High Quantum Efficiency Avalanche PhotodiodeT. Baldawi0A. Abuelhaija1 Department of Electrical Engineering, Princess Sumaya University for Technology, Amman, Jordan. Electrical Engineering Department, Applied Science Private University, Amman, Jordan. A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-length region 1.55μm where the Silica optical fiber has minimum attenuation loss. It has been found that at this wave-length and for the optimum device design the quantum efficiency approaches about 90%.http://ijeee.iust.ac.ir/article-1-1295-en.htmlavalanche photodiodesresponsivityquantum efficiency. |
| spellingShingle | T. Baldawi A. Abuelhaija Modelling of High Quantum Efficiency Avalanche Photodiode Iranian Journal of Electrical and Electronic Engineering avalanche photodiodes responsivity quantum efficiency. |
| title | Modelling of High Quantum Efficiency Avalanche Photodiode |
| title_full | Modelling of High Quantum Efficiency Avalanche Photodiode |
| title_fullStr | Modelling of High Quantum Efficiency Avalanche Photodiode |
| title_full_unstemmed | Modelling of High Quantum Efficiency Avalanche Photodiode |
| title_short | Modelling of High Quantum Efficiency Avalanche Photodiode |
| title_sort | modelling of high quantum efficiency avalanche photodiode |
| topic | avalanche photodiodes responsivity quantum efficiency. |
| url | http://ijeee.iust.ac.ir/article-1-1295-en.html |
| work_keys_str_mv | AT tbaldawi modellingofhighquantumefficiencyavalanchephotodiode AT aabuelhaija modellingofhighquantumefficiencyavalanchephotodiode |