Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer
In this study, a self-powered broadband photodetector based on graphene/NiO/n-Si was fabricated by the direct spin-coating of nanostructured NiO on the Si substrate. The current–voltage measurement of the NiO/Si heterostructure exhibited rectifying characteristics with enhanced photocurrent under li...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/6/551 |
| _version_ | 1797239823663104000 |
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| author | Bhishma Pandit Bhaskar Parida Hyeon-Sik Jang Keun Heo |
| author_facet | Bhishma Pandit Bhaskar Parida Hyeon-Sik Jang Keun Heo |
| author_sort | Bhishma Pandit |
| collection | DOAJ |
| description | In this study, a self-powered broadband photodetector based on graphene/NiO/n-Si was fabricated by the direct spin-coating of nanostructured NiO on the Si substrate. The current–voltage measurement of the NiO/Si heterostructure exhibited rectifying characteristics with enhanced photocurrent under light illumination. Photodetection capability was measured in the range from 300 nm to 800 nm, and a higher photoresponse in the UV region was observed due to the wide bandgap of NiO. The presence of a top graphene transparent conducting electrode further enhanced the responsivity in the whole measured wavelength region from 350 to 800 nm. The photoresponse of the NiO/Si detector at 350 nm was found to increase from 0.0187 to 0.163 A/W at −1 V with the insertion of the graphene top layer. A high photo-to-dark current ratio (≃10<sup>4</sup>) at the zero bias indicates that the device has advantageous application in energy-efficient high-performance broadband photodetectors. |
| first_indexed | 2024-04-24T17:57:40Z |
| format | Article |
| id | doaj.art-dc8a74c58a74471abf9f4e6f92a7f3e4 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-04-24T17:57:40Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-dc8a74c58a74471abf9f4e6f92a7f3e42024-03-27T13:57:40ZengMDPI AGNanomaterials2079-49912024-03-0114655110.3390/nano14060551Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting LayerBhishma Pandit0Bhaskar Parida1Hyeon-Sik Jang2Keun Heo3School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 54896, Republic of KoreaSchool of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 54896, Republic of KoreaSchool of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 54896, Republic of KoreaSchool of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 54896, Republic of KoreaIn this study, a self-powered broadband photodetector based on graphene/NiO/n-Si was fabricated by the direct spin-coating of nanostructured NiO on the Si substrate. The current–voltage measurement of the NiO/Si heterostructure exhibited rectifying characteristics with enhanced photocurrent under light illumination. Photodetection capability was measured in the range from 300 nm to 800 nm, and a higher photoresponse in the UV region was observed due to the wide bandgap of NiO. The presence of a top graphene transparent conducting electrode further enhanced the responsivity in the whole measured wavelength region from 350 to 800 nm. The photoresponse of the NiO/Si detector at 350 nm was found to increase from 0.0187 to 0.163 A/W at −1 V with the insertion of the graphene top layer. A high photo-to-dark current ratio (≃10<sup>4</sup>) at the zero bias indicates that the device has advantageous application in energy-efficient high-performance broadband photodetectors.https://www.mdpi.com/2079-4991/14/6/551graphene/NiO/Sinanostructureheterojunctionself-poweredphotodetector |
| spellingShingle | Bhishma Pandit Bhaskar Parida Hyeon-Sik Jang Keun Heo Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer Nanomaterials graphene/NiO/Si nanostructure heterojunction self-powered photodetector |
| title | Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer |
| title_full | Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer |
| title_fullStr | Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer |
| title_full_unstemmed | Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer |
| title_short | Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer |
| title_sort | self powered broadband photodetector based on nio si heterojunction incorporating graphene transparent conducting layer |
| topic | graphene/NiO/Si nanostructure heterojunction self-powered photodetector |
| url | https://www.mdpi.com/2079-4991/14/6/551 |
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