Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE
Abstract Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film whe...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-02-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2461-1 |
| _version_ | 1827885497368707072 |
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| author | Aihua Zhong Ping Fan Yuanting Zhong Dongping Zhang Fu Li Jingting Luo Yizhu Xie Kazuhiro Hane |
| author_facet | Aihua Zhong Ping Fan Yuanting Zhong Dongping Zhang Fu Li Jingting Luo Yizhu Xie Kazuhiro Hane |
| author_sort | Aihua Zhong |
| collection | DOAJ |
| description | Abstract Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication. |
| first_indexed | 2024-03-12T19:47:36Z |
| format | Article |
| id | doaj.art-dc90982806d14f0bb6c79867ed0719b0 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:47:36Z |
| publishDate | 2018-02-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-dc90982806d14f0bb6c79867ed0719b02023-08-02T03:28:17ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-02-011311710.1186/s11671-018-2461-1Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBEAihua Zhong0Ping Fan1Yuanting Zhong2Dongping Zhang3Fu Li4Jingting Luo5Yizhu Xie6Kazuhiro Hane7Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen UniversityShenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen UniversityDepartment of Automotive Engineering, Foshan PolytechnicShenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen UniversityShenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen UniversityShenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen UniversityShenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen UniversityDepartment of Nanomechanics, Tohoku UniversityAbstract Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.http://link.springer.com/article/10.1186/s11671-018-2461-1GaNNanowall networkGrowth modelAl droplets |
| spellingShingle | Aihua Zhong Ping Fan Yuanting Zhong Dongping Zhang Fu Li Jingting Luo Yizhu Xie Kazuhiro Hane Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE Nanoscale Research Letters GaN Nanowall network Growth model Al droplets |
| title | Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE |
| title_full | Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE |
| title_fullStr | Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE |
| title_full_unstemmed | Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE |
| title_short | Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE |
| title_sort | structure shift of gan among nanowall network nanocolumn and compact film grown on si 111 by mbe |
| topic | GaN Nanowall network Growth model Al droplets |
| url | http://link.springer.com/article/10.1186/s11671-018-2461-1 |
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