Removal Rate of Phosphorus from Molten Silicon
An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperatu...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2011-04-01
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| Series: | High Temperature Materials and Processes |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/htmp.2011.002 |
| _version_ | 1818598236152135680 |
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| author | Kemmotsu Takayuki Nagai Takashi Maeda Masafumi |
| author_facet | Kemmotsu Takayuki Nagai Takashi Maeda Masafumi |
| author_sort | Kemmotsu Takayuki |
| collection | DOAJ |
| description | An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperature of the surface of molten silicon provide effective, neither residual gas pressure in a vacuum chamber nor stirring molten silicon improve the rate, while supplying reactant gas to molten silicon had some effect. |
| first_indexed | 2024-12-16T12:00:29Z |
| format | Article |
| id | doaj.art-dc94b7ef9e424ea88a28cbd8f7942f57 |
| institution | Directory Open Access Journal |
| issn | 0334-6455 2191-0324 |
| language | English |
| last_indexed | 2024-12-16T12:00:29Z |
| publishDate | 2011-04-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | High Temperature Materials and Processes |
| spelling | doaj.art-dc94b7ef9e424ea88a28cbd8f7942f572022-12-21T22:32:28ZengDe GruyterHigh Temperature Materials and Processes0334-64552191-03242011-04-01301-2172210.1515/htmp.2011.002Removal Rate of Phosphorus from Molten SiliconKemmotsu Takayuki0Nagai Takashi1Maeda Masafumi2Institute of Industrial Science, The University of Tokyo, JapanInstitute of Industrial Science, The University of Tokyo, JapanInstitute of Industrial Science, The University of Tokyo, JapanAn electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperature of the surface of molten silicon provide effective, neither residual gas pressure in a vacuum chamber nor stirring molten silicon improve the rate, while supplying reactant gas to molten silicon had some effect.https://doi.org/10.1515/htmp.2011.002siliconphosphoruselectron beamsolar cell |
| spellingShingle | Kemmotsu Takayuki Nagai Takashi Maeda Masafumi Removal Rate of Phosphorus from Molten Silicon High Temperature Materials and Processes silicon phosphorus electron beam solar cell |
| title | Removal Rate of Phosphorus from Molten Silicon |
| title_full | Removal Rate of Phosphorus from Molten Silicon |
| title_fullStr | Removal Rate of Phosphorus from Molten Silicon |
| title_full_unstemmed | Removal Rate of Phosphorus from Molten Silicon |
| title_short | Removal Rate of Phosphorus from Molten Silicon |
| title_sort | removal rate of phosphorus from molten silicon |
| topic | silicon phosphorus electron beam solar cell |
| url | https://doi.org/10.1515/htmp.2011.002 |
| work_keys_str_mv | AT kemmotsutakayuki removalrateofphosphorusfrommoltensilicon AT nagaitakashi removalrateofphosphorusfrommoltensilicon AT maedamasafumi removalrateofphosphorusfrommoltensilicon |