S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations
In this paper, the design, fabrication, and measurements of an S band multi harmonic tuned power amplifier in GaN technology is described. The amplifier has been designed by exploiting second and third harmonic tuning conditions at both input and output ports of the active device. The amplifier has...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-09-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/18/2318 |
| _version_ | 1797519520782352384 |
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| author | Sandro Ghisotti Stefano Pisa Paolo Colantonio |
| author_facet | Sandro Ghisotti Stefano Pisa Paolo Colantonio |
| author_sort | Sandro Ghisotti |
| collection | DOAJ |
| description | In this paper, the design, fabrication, and measurements of an S band multi harmonic tuned power amplifier in GaN technology is described. The amplifier has been designed by exploiting second and third harmonic tuning conditions at both input and output ports of the active device. The amplifier has been realized in a hybrid form, and characterized in terms of small and large signal performance. An operating bandwidth of 300 MHz around 3.55 GHz, with 42.3 dBm output power, 9.3 dB power gain and 53.5% power added efficiency PAE (60% drain efficiency) at 3.7 GHz are measured. |
| first_indexed | 2024-03-10T07:43:57Z |
| format | Article |
| id | doaj.art-dca059a78f784211ab762261e4575957 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T07:43:57Z |
| publishDate | 2021-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-dca059a78f784211ab762261e45759572023-11-22T12:49:11ZengMDPI AGElectronics2079-92922021-09-011018231810.3390/electronics10182318S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned TerminationsSandro Ghisotti0Stefano Pisa1Paolo Colantonio2Department of Information Engineering Electronics and Telecommunications, Sapienza University of Rome, Via Eudossiana, 18, 00184 Roma, ItalyDepartment of Information Engineering Electronics and Telecommunications, Sapienza University of Rome, Via Eudossiana, 18, 00184 Roma, ItalyElectronic Engineering Department, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, ItalyIn this paper, the design, fabrication, and measurements of an S band multi harmonic tuned power amplifier in GaN technology is described. The amplifier has been designed by exploiting second and third harmonic tuning conditions at both input and output ports of the active device. The amplifier has been realized in a hybrid form, and characterized in terms of small and large signal performance. An operating bandwidth of 300 MHz around 3.55 GHz, with 42.3 dBm output power, 9.3 dB power gain and 53.5% power added efficiency PAE (60% drain efficiency) at 3.7 GHz are measured.https://www.mdpi.com/2079-9292/10/18/2318power amplifier (PA)gallium nitride (GaN)harmonic terminations (HT)power added efficiency (PAE) |
| spellingShingle | Sandro Ghisotti Stefano Pisa Paolo Colantonio S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations Electronics power amplifier (PA) gallium nitride (GaN) harmonic terminations (HT) power added efficiency (PAE) |
| title | S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations |
| title_full | S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations |
| title_fullStr | S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations |
| title_full_unstemmed | S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations |
| title_short | S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations |
| title_sort | s band hybrid power amplifier in gan technology with input output multi harmonic tuned terminations |
| topic | power amplifier (PA) gallium nitride (GaN) harmonic terminations (HT) power added efficiency (PAE) |
| url | https://www.mdpi.com/2079-9292/10/18/2318 |
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