Parameters optimization of heterojunction ZnSe/CdS/CIGS/Si solar cells using SCAPS-1D software

It is required to simulate the performance of a photovoltaic solar cell performance to enhance it. Simulation optimization has the benefit of being inexpensive and straightforward, and it allows us to identify the optimum parameters that contribute to the enhancement of the cell. An alternative ZnSe...

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Main Authors: Moussaab Belarbi, Oussama Zeggai, Souad Louhibi-Fasla
Format: Article
Language:English
Published: Renewable Energy Development Center (CDER) 2022-06-01
Series:Revue des Énergies Renouvelables
Subjects:
Online Access:https://revue.cder.dz/index.php/rer/article/view/1036
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author Moussaab Belarbi
Oussama Zeggai
Souad Louhibi-Fasla
author_facet Moussaab Belarbi
Oussama Zeggai
Souad Louhibi-Fasla
author_sort Moussaab Belarbi
collection DOAJ
description It is required to simulate the performance of a photovoltaic solar cell performance to enhance it. Simulation optimization has the benefit of being inexpensive and straightforward, and it allows us to identify the optimum parameters that contribute to the enhancement of the cell. An alternative ZnSe/CdS/CIGS/Si structure has been presented using a solar cell capacitance simulator (SCAPS-1D). This paper aims to increase device efficiency by improving the physical characteristics of the many layers involved in cell realisation. We also tried to investigate the variation of electrical characteristics such as Voc, Jsc, , and FF with the changes in material parameters, notably the absorber layer thickness (CIGS, p-Si) (CIGS, p-Si). On the other hand, the temperature dependency has been simulated to guide device manufacturers to attain higher efficiency in varied temperature circumstances. The calculation result shows that excellent performance can be reached by varying the parameters, and the highest efficiency (24,94 %) of the solar cell can be reached under certain conditions, where the thicknesses of ZnSe, CdS, CIGS, and Si are 0.2m, 0.09m, 1.4m, and 0.6m respectively and for the optimal value of temperature equal to 295K.
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spelling doaj.art-dcbb216346af4501932101462877a2822023-07-20T14:33:34ZengRenewable Energy Development Center (CDER)Revue des Énergies Renouvelables1112-22422716-82472022-06-0131 – 3631 – 3610.54966/jreen.v1i1.10361036Parameters optimization of heterojunction ZnSe/CdS/CIGS/Si solar cells using SCAPS-1D softwareMoussaab Belarbi0Oussama Zeggai1Souad Louhibi-Fasla2Laboratory of Micro and Nanophysics — LaMiN, Department of FPST-École Nationale Polytechnique d’Oran-Maurice Audin, BP 1523, Oran 31000, AlgeriaDepartment of Common Core, Faculty of Exact Sciences and Informatics, Hassiba Ben Bouali University, BP 151, Chlef 02000, AlgeriaLaboratory of Micro and Nanophysics — LaMiN, Department of FPST-École Nationale Polytechnique d’Oran-Maurice Audin, BP 1523, Oran 31000, AlgeriaIt is required to simulate the performance of a photovoltaic solar cell performance to enhance it. Simulation optimization has the benefit of being inexpensive and straightforward, and it allows us to identify the optimum parameters that contribute to the enhancement of the cell. An alternative ZnSe/CdS/CIGS/Si structure has been presented using a solar cell capacitance simulator (SCAPS-1D). This paper aims to increase device efficiency by improving the physical characteristics of the many layers involved in cell realisation. We also tried to investigate the variation of electrical characteristics such as Voc, Jsc, , and FF with the changes in material parameters, notably the absorber layer thickness (CIGS, p-Si) (CIGS, p-Si). On the other hand, the temperature dependency has been simulated to guide device manufacturers to attain higher efficiency in varied temperature circumstances. The calculation result shows that excellent performance can be reached by varying the parameters, and the highest efficiency (24,94 %) of the solar cell can be reached under certain conditions, where the thicknesses of ZnSe, CdS, CIGS, and Si are 0.2m, 0.09m, 1.4m, and 0.6m respectively and for the optimal value of temperature equal to 295K.https://revue.cder.dz/index.php/rer/article/view/1036cigs solar cellj-v characteristicscaps-1dthickness
spellingShingle Moussaab Belarbi
Oussama Zeggai
Souad Louhibi-Fasla
Parameters optimization of heterojunction ZnSe/CdS/CIGS/Si solar cells using SCAPS-1D software
Revue des Énergies Renouvelables
cigs solar cell
j-v characteristic
scaps-1d
thickness
title Parameters optimization of heterojunction ZnSe/CdS/CIGS/Si solar cells using SCAPS-1D software
title_full Parameters optimization of heterojunction ZnSe/CdS/CIGS/Si solar cells using SCAPS-1D software
title_fullStr Parameters optimization of heterojunction ZnSe/CdS/CIGS/Si solar cells using SCAPS-1D software
title_full_unstemmed Parameters optimization of heterojunction ZnSe/CdS/CIGS/Si solar cells using SCAPS-1D software
title_short Parameters optimization of heterojunction ZnSe/CdS/CIGS/Si solar cells using SCAPS-1D software
title_sort parameters optimization of heterojunction znse cds cigs si solar cells using scaps 1d software
topic cigs solar cell
j-v characteristic
scaps-1d
thickness
url https://revue.cder.dz/index.php/rer/article/view/1036
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