Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering
In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than tha...
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| Format: | Article |
| Language: | English |
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MDPI AG
2014-02-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/14/3/3825 |
| _version_ | 1798004187962802176 |
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| author | Li-Chen Yen Ming-Tsyr Tang Fang-Yu Chang Tung-Ming Pan Tien-Sheng Chao Chiang-Hsuan Lee |
| author_facet | Li-Chen Yen Ming-Tsyr Tang Fang-Yu Chang Tung-Ming Pan Tien-Sheng Chao Chiang-Hsuan Lee |
| author_sort | Li-Chen Yen |
| collection | DOAJ |
| description | In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si–OH2+ and Si–O− bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems. |
| first_indexed | 2024-04-11T12:19:48Z |
| format | Article |
| id | doaj.art-dcc728bce9c140bc8388ee3e3ca4bd84 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-11T12:19:48Z |
| publishDate | 2014-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-dcc728bce9c140bc8388ee3e3ca4bd842022-12-22T04:24:08ZengMDPI AGSensors1424-82202014-02-011433825383210.3390/s140303825s140303825Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 SinteringLi-Chen Yen0Ming-Tsyr Tang1Fang-Yu Chang2Tung-Ming Pan3Tien-Sheng Chao4Chiang-Hsuan Lee5Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electrophysics, National Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electrophysics, National Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electronics Engineering, Chang Gung University, Taoyuan 333, TaiwanDepartment of Electrophysics, National Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electronics Engineering, Chang Gung University, Taoyuan 333, TaiwanIn this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si–OH2+ and Si–O− bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.http://www.mdpi.com/1424-8220/14/3/3825low-temperature polycrystalline-silicon (poly-Si)thin-film transistors (TFTs)H2 sinteringpH sensitivity |
| spellingShingle | Li-Chen Yen Ming-Tsyr Tang Fang-Yu Chang Tung-Ming Pan Tien-Sheng Chao Chiang-Hsuan Lee Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering Sensors low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) H2 sintering pH sensitivity |
| title | Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering |
| title_full | Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering |
| title_fullStr | Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering |
| title_full_unstemmed | Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering |
| title_short | Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering |
| title_sort | improvement in ph sensitivity of low temperature polycrystalline silicon thin film transistor sensors using h2 sintering |
| topic | low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) H2 sintering pH sensitivity |
| url | http://www.mdpi.com/1424-8220/14/3/3825 |
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