A simple and robust approach to reducing contact resistance in organic transistors

Minimizing contact effects in organic semiconductor-based devices is a key step toward the development of a low-cost technology for next-generation electronics. Here, the authors reduce contact resistance in organic devices by engineering electrodes with high work function surface domains.

Bibliographic Details
Main Authors: Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain McCulloch, John E. Anthony, Lee J. Richter, Dean M. DeLongchamp, Oana D. Jurchescu
Format: Article
Language:English
Published: Nature Portfolio 2018-12-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-018-07388-3
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author Zachary A. Lamport
Katrina J. Barth
Hyunsu Lee
Eliot Gann
Sebastian Engmann
Hu Chen
Martin Guthold
Iain McCulloch
John E. Anthony
Lee J. Richter
Dean M. DeLongchamp
Oana D. Jurchescu
author_facet Zachary A. Lamport
Katrina J. Barth
Hyunsu Lee
Eliot Gann
Sebastian Engmann
Hu Chen
Martin Guthold
Iain McCulloch
John E. Anthony
Lee J. Richter
Dean M. DeLongchamp
Oana D. Jurchescu
author_sort Zachary A. Lamport
collection DOAJ
description Minimizing contact effects in organic semiconductor-based devices is a key step toward the development of a low-cost technology for next-generation electronics. Here, the authors reduce contact resistance in organic devices by engineering electrodes with high work function surface domains.
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spelling doaj.art-dcda3fcbac0c45089d8acb0dec9f6ac52022-12-21T18:33:19ZengNature PortfolioNature Communications2041-17232018-12-01911810.1038/s41467-018-07388-3A simple and robust approach to reducing contact resistance in organic transistorsZachary A. Lamport0Katrina J. Barth1Hyunsu Lee2Eliot Gann3Sebastian Engmann4Hu Chen5Martin Guthold6Iain McCulloch7John E. Anthony8Lee J. Richter9Dean M. DeLongchamp10Oana D. Jurchescu11Department of Physics and Center for Functional Materials, Wake Forest UniversityDepartment of Physics and Center for Functional Materials, Wake Forest UniversityDepartment of Physics and Center for Functional Materials, Wake Forest UniversityMaterials Science and Engineering Division, National Institute of Standards and TechnologyMaterials Science and Engineering Division, National Institute of Standards and TechnologyKAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST)Department of Physics and Center for Functional Materials, Wake Forest UniversityKAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST)Department of Chemistry, University of KentuckyMaterials Science and Engineering Division, National Institute of Standards and TechnologyMaterials Science and Engineering Division, National Institute of Standards and TechnologyDepartment of Physics and Center for Functional Materials, Wake Forest UniversityMinimizing contact effects in organic semiconductor-based devices is a key step toward the development of a low-cost technology for next-generation electronics. Here, the authors reduce contact resistance in organic devices by engineering electrodes with high work function surface domains.https://doi.org/10.1038/s41467-018-07388-3
spellingShingle Zachary A. Lamport
Katrina J. Barth
Hyunsu Lee
Eliot Gann
Sebastian Engmann
Hu Chen
Martin Guthold
Iain McCulloch
John E. Anthony
Lee J. Richter
Dean M. DeLongchamp
Oana D. Jurchescu
A simple and robust approach to reducing contact resistance in organic transistors
Nature Communications
title A simple and robust approach to reducing contact resistance in organic transistors
title_full A simple and robust approach to reducing contact resistance in organic transistors
title_fullStr A simple and robust approach to reducing contact resistance in organic transistors
title_full_unstemmed A simple and robust approach to reducing contact resistance in organic transistors
title_short A simple and robust approach to reducing contact resistance in organic transistors
title_sort simple and robust approach to reducing contact resistance in organic transistors
url https://doi.org/10.1038/s41467-018-07388-3
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