A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI
The importance of energy-constrained processors continues to grow especially for ultra-portable sensor-based platforms for the Internet-of-Things (IoT). Processors for these IoT applications primarily operate at near-threshold (NT) voltages and have multiple power modes. Achieving high conversion ef...
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| Format: | Article |
| Language: | English |
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MDPI AG
2016-09-01
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| Series: | Journal of Low Power Electronics and Applications |
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| Online Access: | http://www.mdpi.com/2079-9268/6/3/17 |
| _version_ | 1828232580830330880 |
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| author | Matthew Turnquist Markus Hiienkari Jani Mäkipää Lauri Koskinen |
| author_facet | Matthew Turnquist Markus Hiienkari Jani Mäkipää Lauri Koskinen |
| author_sort | Matthew Turnquist |
| collection | DOAJ |
| description | The importance of energy-constrained processors continues to grow especially for ultra-portable sensor-based platforms for the Internet-of-Things (IoT). Processors for these IoT applications primarily operate at near-threshold (NT) voltages and have multiple power modes. Achieving high conversion efficiency within the DC–DC converter that supplies these processors is critical since energy consumption of the DC–DC/processor system is proportional to the DC–DC converter efficiency. The DC–DC converter must maintain high efficiency over a large load range generated from the multiple power modes of the processor. This paper presents a fully integrated step-down self-oscillating switched-capacitor DC–DC converter that is capable of meeting these challenges. The area of the converter is 0.0104 mm2 and is designed in 28 nm ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI). Back-gate biasing within FD-SOI is utilized to increase the load power range of the converter. With an input of 1 V and output of 460 mV, measurements of the converter show a minimum efficiency of 75% for 79 nW to 200 µW loads. Measurements with an off-chip NT processor load show efficiency up to 86%. The converter’s large load power range and high efficiency make it an excellent fit for energy-constrained processors. |
| first_indexed | 2024-04-12T19:25:40Z |
| format | Article |
| id | doaj.art-dd03482df97c434fada283f11d36b467 |
| institution | Directory Open Access Journal |
| issn | 2079-9268 |
| language | English |
| last_indexed | 2024-04-12T19:25:40Z |
| publishDate | 2016-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Journal of Low Power Electronics and Applications |
| spelling | doaj.art-dd03482df97c434fada283f11d36b4672022-12-22T03:19:30ZengMDPI AGJournal of Low Power Electronics and Applications2079-92682016-09-01631710.3390/jlpea6030017jlpea6030017A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOIMatthew Turnquist0Markus Hiienkari1Jani Mäkipää2Lauri Koskinen3Technology Research Center, University of Turku, Joukahaisenkatu 3, Turku 20520, FinlandTechnology Research Center, University of Turku, Joukahaisenkatu 3, Turku 20520, FinlandVTT Technical Research Center, Vuorimiehentie 3, Espoo 02044, FinlandTechnology Research Center, University of Turku, Joukahaisenkatu 3, Turku 20520, FinlandThe importance of energy-constrained processors continues to grow especially for ultra-portable sensor-based platforms for the Internet-of-Things (IoT). Processors for these IoT applications primarily operate at near-threshold (NT) voltages and have multiple power modes. Achieving high conversion efficiency within the DC–DC converter that supplies these processors is critical since energy consumption of the DC–DC/processor system is proportional to the DC–DC converter efficiency. The DC–DC converter must maintain high efficiency over a large load range generated from the multiple power modes of the processor. This paper presents a fully integrated step-down self-oscillating switched-capacitor DC–DC converter that is capable of meeting these challenges. The area of the converter is 0.0104 mm2 and is designed in 28 nm ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI). Back-gate biasing within FD-SOI is utilized to increase the load power range of the converter. With an input of 1 V and output of 460 mV, measurements of the converter show a minimum efficiency of 75% for 79 nW to 200 µW loads. Measurements with an off-chip NT processor load show efficiency up to 86%. The converter’s large load power range and high efficiency make it an excellent fit for energy-constrained processors.http://www.mdpi.com/2079-9268/6/3/17switched-capacitorDC–DC converternear-threshold voltageself-oscillatingultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI)fully-depleted SOI (UTBB FD-SOI)sub-thresholdlow voltage regulation |
| spellingShingle | Matthew Turnquist Markus Hiienkari Jani Mäkipää Lauri Koskinen A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI Journal of Low Power Electronics and Applications switched-capacitor DC–DC converter near-threshold voltage self-oscillating ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI) fully-depleted SOI (UTBB FD-SOI) sub-threshold low voltage regulation |
| title | A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI |
| title_full | A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI |
| title_fullStr | A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI |
| title_full_unstemmed | A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI |
| title_short | A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI |
| title_sort | fully integrated 2 1 self oscillating switched capacitor dc dc converter in 28 nm utbb fd soi |
| topic | switched-capacitor DC–DC converter near-threshold voltage self-oscillating ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI) fully-depleted SOI (UTBB FD-SOI) sub-threshold low voltage regulation |
| url | http://www.mdpi.com/2079-9268/6/3/17 |
| work_keys_str_mv | AT matthewturnquist afullyintegrated21selfoscillatingswitchedcapacitordcdcconverterin28nmutbbfdsoi AT markushiienkari afullyintegrated21selfoscillatingswitchedcapacitordcdcconverterin28nmutbbfdsoi AT janimakipaa afullyintegrated21selfoscillatingswitchedcapacitordcdcconverterin28nmutbbfdsoi AT laurikoskinen afullyintegrated21selfoscillatingswitchedcapacitordcdcconverterin28nmutbbfdsoi AT matthewturnquist fullyintegrated21selfoscillatingswitchedcapacitordcdcconverterin28nmutbbfdsoi AT markushiienkari fullyintegrated21selfoscillatingswitchedcapacitordcdcconverterin28nmutbbfdsoi AT janimakipaa fullyintegrated21selfoscillatingswitchedcapacitordcdcconverterin28nmutbbfdsoi AT laurikoskinen fullyintegrated21selfoscillatingswitchedcapacitordcdcconverterin28nmutbbfdsoi |