Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/3/606 |
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| author | Yuanhao Miao Hongxiao Lin Ben Li Tianyu Dong Chuangqi He Junhao Du Xuewei Zhao Ziwei Zhou Jiale Su He Wang Yan Dong Bin Lu Linpeng Dong Henry H. Radamson |
| author_facet | Yuanhao Miao Hongxiao Lin Ben Li Tianyu Dong Chuangqi He Junhao Du Xuewei Zhao Ziwei Zhou Jiale Su He Wang Yan Dong Bin Lu Linpeng Dong Henry H. Radamson |
| author_sort | Yuanhao Miao |
| collection | DOAJ |
| description | Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology. |
| first_indexed | 2024-03-11T09:31:49Z |
| format | Article |
| id | doaj.art-dd0e15541ba34154bf07e1ad6be6565f |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T09:31:49Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-dd0e15541ba34154bf07e1ad6be6565f2023-11-16T17:37:12ZengMDPI AGNanomaterials2079-49912023-02-0113360610.3390/nano13030606Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral RegionYuanhao Miao0Hongxiao Lin1Ben Li2Tianyu Dong3Chuangqi He4Junhao Du5Xuewei Zhao6Ziwei Zhou7Jiale Su8He Wang9Yan Dong10Bin Lu11Linpeng Dong12Henry H. Radamson13Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaAmong photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.https://www.mdpi.com/2079-4991/13/3/606APDsPDsGe(GeSn)InGaAsgroup IVLiDAR |
| spellingShingle | Yuanhao Miao Hongxiao Lin Ben Li Tianyu Dong Chuangqi He Junhao Du Xuewei Zhao Ziwei Zhou Jiale Su He Wang Yan Dong Bin Lu Linpeng Dong Henry H. Radamson Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region Nanomaterials APDs PDs Ge(GeSn) InGaAs group IV LiDAR |
| title | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
| title_full | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
| title_fullStr | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
| title_full_unstemmed | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
| title_short | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
| title_sort | review of ge gesn and ingaas avalanche diodes operating in the swir spectral region |
| topic | APDs PDs Ge(GeSn) InGaAs group IV LiDAR |
| url | https://www.mdpi.com/2079-4991/13/3/606 |
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