| Summary: | Metallic transition-metal dichalcogenides are emerging as promising electrode materials for applications such as 2D electronic devices owing to their good electrical conductivity. In this study, a high-performance humidity sensor based on NbTe<sub>2</sub> electrode material and an indium-doped SnO<sub>2</sub> thin film sensing layer was fabricated using a pulsed laser deposition system. The morphology, structural, elemental compositions, and electrical properties of the as-deposited samples were characterized. Additionally, the humidity sensing response of the fabricated sensor with In-doped SnO<sub>2</sub> (8:92 wt%) sensing film was evaluated in a wide range of relative humidity at room temperature. The results demonstrated that the humidity sensor based on In-doped SnO<sub>2</sub> exhibited a high sensitivity of 103.1 Ω/%RH, fast response and recovery times, a low hysteresis value, good linearity, and repeatability. In addition, the sensor had good long-term stability, with a variation in impedance of less than 3%. The results indicated that the humidity sensor could be suitable for practical humidity sensing applications.
|
|---|