Synthesis and Characterization of Indium-Doped SnO<sub>2</sub>-Based Impedance Spectroscopy Sensor for Real-Time Humidity Sensing Applications
Metallic transition-metal dichalcogenides are emerging as promising electrode materials for applications such as 2D electronic devices owing to their good electrical conductivity. In this study, a high-performance humidity sensor based on NbTe<sub>2</sub> electrode material and an indium...
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MDPI AG
2024-01-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/14/1/82 |
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| author | Birhanu Alemayehu Eunsung Shin Vladimir Vasilyev Guru Subramanyam |
| author_facet | Birhanu Alemayehu Eunsung Shin Vladimir Vasilyev Guru Subramanyam |
| author_sort | Birhanu Alemayehu |
| collection | DOAJ |
| description | Metallic transition-metal dichalcogenides are emerging as promising electrode materials for applications such as 2D electronic devices owing to their good electrical conductivity. In this study, a high-performance humidity sensor based on NbTe<sub>2</sub> electrode material and an indium-doped SnO<sub>2</sub> thin film sensing layer was fabricated using a pulsed laser deposition system. The morphology, structural, elemental compositions, and electrical properties of the as-deposited samples were characterized. Additionally, the humidity sensing response of the fabricated sensor with In-doped SnO<sub>2</sub> (8:92 wt%) sensing film was evaluated in a wide range of relative humidity at room temperature. The results demonstrated that the humidity sensor based on In-doped SnO<sub>2</sub> exhibited a high sensitivity of 103.1 Ω/%RH, fast response and recovery times, a low hysteresis value, good linearity, and repeatability. In addition, the sensor had good long-term stability, with a variation in impedance of less than 3%. The results indicated that the humidity sensor could be suitable for practical humidity sensing applications. |
| first_indexed | 2024-03-08T09:55:18Z |
| format | Article |
| id | doaj.art-dd20e5ce0ecb4650abd2ee54a06279ba |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-08T09:55:18Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-dd20e5ce0ecb4650abd2ee54a06279ba2024-01-29T13:51:29ZengMDPI AGCrystals2073-43522024-01-011418210.3390/cryst14010082Synthesis and Characterization of Indium-Doped SnO<sub>2</sub>-Based Impedance Spectroscopy Sensor for Real-Time Humidity Sensing ApplicationsBirhanu Alemayehu0Eunsung Shin1Vladimir Vasilyev2Guru Subramanyam3Center of Excellence for Thin-Film Research and Surface Engineering, Department of Electrical and Computer Engineering, University of Dayton, Dayton, OH 45469, USACenter of Excellence for Thin-Film Research and Surface Engineering, Department of Electrical and Computer Engineering, University of Dayton, Dayton, OH 45469, USAAir Force Research Laboratory, Sensors Directorate, Wright Patterson AFB, Fairborn, OH 45433, USACenter of Excellence for Thin-Film Research and Surface Engineering, Department of Electrical and Computer Engineering, University of Dayton, Dayton, OH 45469, USAMetallic transition-metal dichalcogenides are emerging as promising electrode materials for applications such as 2D electronic devices owing to their good electrical conductivity. In this study, a high-performance humidity sensor based on NbTe<sub>2</sub> electrode material and an indium-doped SnO<sub>2</sub> thin film sensing layer was fabricated using a pulsed laser deposition system. The morphology, structural, elemental compositions, and electrical properties of the as-deposited samples were characterized. Additionally, the humidity sensing response of the fabricated sensor with In-doped SnO<sub>2</sub> (8:92 wt%) sensing film was evaluated in a wide range of relative humidity at room temperature. The results demonstrated that the humidity sensor based on In-doped SnO<sub>2</sub> exhibited a high sensitivity of 103.1 Ω/%RH, fast response and recovery times, a low hysteresis value, good linearity, and repeatability. In addition, the sensor had good long-term stability, with a variation in impedance of less than 3%. The results indicated that the humidity sensor could be suitable for practical humidity sensing applications.https://www.mdpi.com/2073-4352/14/1/82humidity sensorIn-doped SnO<sub>2</sub>pulsed laser depositioninter-digitated transducerNbTe<sub>2</sub> electrode |
| spellingShingle | Birhanu Alemayehu Eunsung Shin Vladimir Vasilyev Guru Subramanyam Synthesis and Characterization of Indium-Doped SnO<sub>2</sub>-Based Impedance Spectroscopy Sensor for Real-Time Humidity Sensing Applications Crystals humidity sensor In-doped SnO<sub>2</sub> pulsed laser deposition inter-digitated transducer NbTe<sub>2</sub> electrode |
| title | Synthesis and Characterization of Indium-Doped SnO<sub>2</sub>-Based Impedance Spectroscopy Sensor for Real-Time Humidity Sensing Applications |
| title_full | Synthesis and Characterization of Indium-Doped SnO<sub>2</sub>-Based Impedance Spectroscopy Sensor for Real-Time Humidity Sensing Applications |
| title_fullStr | Synthesis and Characterization of Indium-Doped SnO<sub>2</sub>-Based Impedance Spectroscopy Sensor for Real-Time Humidity Sensing Applications |
| title_full_unstemmed | Synthesis and Characterization of Indium-Doped SnO<sub>2</sub>-Based Impedance Spectroscopy Sensor for Real-Time Humidity Sensing Applications |
| title_short | Synthesis and Characterization of Indium-Doped SnO<sub>2</sub>-Based Impedance Spectroscopy Sensor for Real-Time Humidity Sensing Applications |
| title_sort | synthesis and characterization of indium doped sno sub 2 sub based impedance spectroscopy sensor for real time humidity sensing applications |
| topic | humidity sensor In-doped SnO<sub>2</sub> pulsed laser deposition inter-digitated transducer NbTe<sub>2</sub> electrode |
| url | https://www.mdpi.com/2073-4352/14/1/82 |
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