Improved Charge Transfer Contribution by Cosputtering Ag and ZnO
A two-dimensional polystyrene microsphere array cosputtered with Ag and ZnO was designed for evaluating surface-enhanced Raman scattering (SERS) activity. The surface plasmon resonance (SPR) and SERS properties were significantly changed by the introduction of ZnO into the Ag film. By increasing the...
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MDPI AG
2020-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/8/1455 |
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| author | Bingbing Han Shuang Guo Sila Jin Eungyeong Park Xiangxin Xue Lei Chen Young Mee Jung |
| author_facet | Bingbing Han Shuang Guo Sila Jin Eungyeong Park Xiangxin Xue Lei Chen Young Mee Jung |
| author_sort | Bingbing Han |
| collection | DOAJ |
| description | A two-dimensional polystyrene microsphere array cosputtered with Ag and ZnO was designed for evaluating surface-enhanced Raman scattering (SERS) activity. The surface plasmon resonance (SPR) and SERS properties were significantly changed by the introduction of ZnO into the Ag film. By increasing the Ag sputtering power, a redshift of the SPR peak was obtained. Moreover, improved SERS activity occurred because of the electromagnetic (EM) contribution from the increasing Ag content and the charge transfer (CT) contribution from the introduction of ZnO. More importantly, the Hall effect was employed to evaluate the carrier density effect on the SERS contribution of the Ag/ZnO film. The increase in the carrier density as the Ag sputtering power increased indicated an increasing number of free electrons stored in the Ag/ZnO film, which was accompanied by improved EM and CT contributions. |
| first_indexed | 2024-03-10T18:13:29Z |
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| id | doaj.art-dd3c3ae8accb4715bd8f48da1ce8449c |
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| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T18:13:29Z |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj.art-dd3c3ae8accb4715bd8f48da1ce8449c2023-11-20T07:55:24ZengMDPI AGNanomaterials2079-49912020-07-01108145510.3390/nano10081455Improved Charge Transfer Contribution by Cosputtering Ag and ZnOBingbing Han0Shuang Guo1Sila Jin2Eungyeong Park3Xiangxin Xue4Lei Chen5Young Mee Jung6Key Laboratory of Preparation and Applications of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, ChinaDepartment of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, KoreaDepartment of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, KoreaDepartment of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, KoreaKey Laboratory of Preparation and Applications of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, ChinaKey Laboratory of Preparation and Applications of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, ChinaDepartment of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, KoreaA two-dimensional polystyrene microsphere array cosputtered with Ag and ZnO was designed for evaluating surface-enhanced Raman scattering (SERS) activity. The surface plasmon resonance (SPR) and SERS properties were significantly changed by the introduction of ZnO into the Ag film. By increasing the Ag sputtering power, a redshift of the SPR peak was obtained. Moreover, improved SERS activity occurred because of the electromagnetic (EM) contribution from the increasing Ag content and the charge transfer (CT) contribution from the introduction of ZnO. More importantly, the Hall effect was employed to evaluate the carrier density effect on the SERS contribution of the Ag/ZnO film. The increase in the carrier density as the Ag sputtering power increased indicated an increasing number of free electrons stored in the Ag/ZnO film, which was accompanied by improved EM and CT contributions.https://www.mdpi.com/2079-4991/10/8/1455SERSSPRCTEMAg/ZnO film |
| spellingShingle | Bingbing Han Shuang Guo Sila Jin Eungyeong Park Xiangxin Xue Lei Chen Young Mee Jung Improved Charge Transfer Contribution by Cosputtering Ag and ZnO Nanomaterials SERS SPR CT EM Ag/ZnO film |
| title | Improved Charge Transfer Contribution by Cosputtering Ag and ZnO |
| title_full | Improved Charge Transfer Contribution by Cosputtering Ag and ZnO |
| title_fullStr | Improved Charge Transfer Contribution by Cosputtering Ag and ZnO |
| title_full_unstemmed | Improved Charge Transfer Contribution by Cosputtering Ag and ZnO |
| title_short | Improved Charge Transfer Contribution by Cosputtering Ag and ZnO |
| title_sort | improved charge transfer contribution by cosputtering ag and zno |
| topic | SERS SPR CT EM Ag/ZnO film |
| url | https://www.mdpi.com/2079-4991/10/8/1455 |
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