Large anomalous Hall effect and negative magnetoresistance in half-topological semimetals

Abstract Proposed mechanisms for large intrinsic anomalous Hall effect (AHE) in magnetic topological semimetals include diverging Berry curvatures of Weyl nodes, anticrossing nodal rings or points of non-trivial bands. Here we demonstrate that a half-topological semimetal (HTS) state near a topologi...

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Bibliographic Details
Main Authors: Yanglin Zhu, Cheng-Yi Huang, Yu Wang, David Graf, Hsin Lin, Seng Huat Lee, John Singleton, Lujin Min, Johanna C. Palmstrom, Arun Bansil, Bahadur Singh, Zhiqiang Mao
Format: Article
Language:English
Published: Nature Portfolio 2023-11-01
Series:Communications Physics
Online Access:https://doi.org/10.1038/s42005-023-01469-6
Description
Summary:Abstract Proposed mechanisms for large intrinsic anomalous Hall effect (AHE) in magnetic topological semimetals include diverging Berry curvatures of Weyl nodes, anticrossing nodal rings or points of non-trivial bands. Here we demonstrate that a half-topological semimetal (HTS) state near a topological critical point can provide an alternative mechanism for a large AHE via systematic studies on an antiferromagnetic (AFM) half-Heusler compound TbPdBi. We not only observe a large AHE with tanΘH ≈ 2 in its field-driven ferromagnetic (FM) phase, but also find a distinct Hall resistivity peak in its canted AFM phase. Moreover, we observe a large negative magnetoresistance with a value of ~98%. Our in-depth theoretical modelling indicates that these exotic transport properties originate from the HTS state which exhibits Berry curvature cancellation between the trivial spin-up and nontrivial spin-down bands. Our study offers alternative strategies for improved materials design for spintronics and other applications.
ISSN:2399-3650