Electromagnetic wave absorption property of SiC whiskers regulated by stacking faults and SiC@SiO2 core-sheath microstructure
In this study, SiC whiskers were prepared by chemical vapor deposition using graphite powder mixed with resin powder and silicon powder as raw materials. The crystal structure, morphology, surface chemical state and electromagnetic wave absorption properties were studied. The density and number of s...
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Elsevier
2023-05-01
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| Series: | Journal of Materials Research and Technology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785423004428 |
| _version_ | 1827920388725669888 |
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| author | Jiayan Li Fan Zhang Ping He Bo Wang Yi Tan |
| author_facet | Jiayan Li Fan Zhang Ping He Bo Wang Yi Tan |
| author_sort | Jiayan Li |
| collection | DOAJ |
| description | In this study, SiC whiskers were prepared by chemical vapor deposition using graphite powder mixed with resin powder and silicon powder as raw materials. The crystal structure, morphology, surface chemical state and electromagnetic wave absorption properties were studied. The density and number of stacking faults inside the SiC whiskers can be controlled by changing the proportion of nitrogen atmosphere during the preparation of SiC whiskers which in turn affects the wave absorption properties. We found that the whiskers prepared in a nitrogen-free atmosphere with a large number of stacking faults ‘have better electromagnetic wave absorption performance. This is mainly due to the large number of stacking faults inside the SiC whiskers that can act as polarization and scattering centers to enhance dielectric losses under alternating electromagnetic fields. The minimum reflection loss (RL) can reach −20 dB near 17 GHz, and an effective absorption (RL ≤ −10 dB) bandwidth of 1.1 GHz (16.9–18) at the absorber layer thickness of 5 mm.In addition, after proving that a large number of stacking faults are beneficial, a SiO2 shell was designed outside the SiC whiskers through a simple oxidation process. The minimum RL can reach −35 dB near 17 GHz, and an effective absorption (RL ≤ −10 dB) bandwidth of 2.5 GHz (15.5–18) at the absorber layer thickness of 5 mm. |
| first_indexed | 2024-03-13T04:10:46Z |
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| id | doaj.art-dd594a21d51e426d9a3cc456bbbce97c |
| institution | Directory Open Access Journal |
| issn | 2238-7854 |
| language | English |
| last_indexed | 2024-03-13T04:10:46Z |
| publishDate | 2023-05-01 |
| publisher | Elsevier |
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| series | Journal of Materials Research and Technology |
| spelling | doaj.art-dd594a21d51e426d9a3cc456bbbce97c2023-06-21T06:55:25ZengElsevierJournal of Materials Research and Technology2238-78542023-05-01249951004Electromagnetic wave absorption property of SiC whiskers regulated by stacking faults and SiC@SiO2 core-sheath microstructureJiayan Li0Fan Zhang1Ping He2Bo Wang3Yi Tan4Key Laboratory of Materials Modification By Laser, Ion, And Electron Beams (Dalian University of Technology) Ministry of Education, Dalian 116024, China; School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China; Corresponding author.Key Laboratory of Materials Modification By Laser, Ion, And Electron Beams (Dalian University of Technology) Ministry of Education, Dalian 116024, China; School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China; Corresponding author.Key Laboratory of Materials Modification By Laser, Ion, And Electron Beams (Dalian University of Technology) Ministry of Education, Dalian 116024, China; School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, ChinaKey Laboratory of Materials Modification By Laser, Ion, And Electron Beams (Dalian University of Technology) Ministry of Education, Dalian 116024, China; School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, ChinaIn this study, SiC whiskers were prepared by chemical vapor deposition using graphite powder mixed with resin powder and silicon powder as raw materials. The crystal structure, morphology, surface chemical state and electromagnetic wave absorption properties were studied. The density and number of stacking faults inside the SiC whiskers can be controlled by changing the proportion of nitrogen atmosphere during the preparation of SiC whiskers which in turn affects the wave absorption properties. We found that the whiskers prepared in a nitrogen-free atmosphere with a large number of stacking faults ‘have better electromagnetic wave absorption performance. This is mainly due to the large number of stacking faults inside the SiC whiskers that can act as polarization and scattering centers to enhance dielectric losses under alternating electromagnetic fields. The minimum reflection loss (RL) can reach −20 dB near 17 GHz, and an effective absorption (RL ≤ −10 dB) bandwidth of 1.1 GHz (16.9–18) at the absorber layer thickness of 5 mm.In addition, after proving that a large number of stacking faults are beneficial, a SiO2 shell was designed outside the SiC whiskers through a simple oxidation process. The minimum RL can reach −35 dB near 17 GHz, and an effective absorption (RL ≤ −10 dB) bandwidth of 2.5 GHz (15.5–18) at the absorber layer thickness of 5 mm.http://www.sciencedirect.com/science/article/pii/S2238785423004428SiC whiskersDielectric propertiesElectromagnetic wave absorptionStacking faultsMicrostructure |
| spellingShingle | Jiayan Li Fan Zhang Ping He Bo Wang Yi Tan Electromagnetic wave absorption property of SiC whiskers regulated by stacking faults and SiC@SiO2 core-sheath microstructure Journal of Materials Research and Technology SiC whiskers Dielectric properties Electromagnetic wave absorption Stacking faults Microstructure |
| title | Electromagnetic wave absorption property of SiC whiskers regulated by stacking faults and SiC@SiO2 core-sheath microstructure |
| title_full | Electromagnetic wave absorption property of SiC whiskers regulated by stacking faults and SiC@SiO2 core-sheath microstructure |
| title_fullStr | Electromagnetic wave absorption property of SiC whiskers regulated by stacking faults and SiC@SiO2 core-sheath microstructure |
| title_full_unstemmed | Electromagnetic wave absorption property of SiC whiskers regulated by stacking faults and SiC@SiO2 core-sheath microstructure |
| title_short | Electromagnetic wave absorption property of SiC whiskers regulated by stacking faults and SiC@SiO2 core-sheath microstructure |
| title_sort | electromagnetic wave absorption property of sic whiskers regulated by stacking faults and sic sio2 core sheath microstructure |
| topic | SiC whiskers Dielectric properties Electromagnetic wave absorption Stacking faults Microstructure |
| url | http://www.sciencedirect.com/science/article/pii/S2238785423004428 |
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