Transient Study of Femtosecond Laser–Induced Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Film Morphology
Femtosecond laser-induced crystallization and ablation of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) phase change film is investigated by reflectivity pump-probing technology. Below the ablation threshold, the face-centered cubic structure (FCC) state in the...
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MDPI AG
2021-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/6/616 |
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| author | Wenju Zhou Zifeng Zhang Qingwei Zhang Dongfeng Qi Tianxiang Xu Shixun Dai Xiang Shen |
| author_facet | Wenju Zhou Zifeng Zhang Qingwei Zhang Dongfeng Qi Tianxiang Xu Shixun Dai Xiang Shen |
| author_sort | Wenju Zhou |
| collection | DOAJ |
| description | Femtosecond laser-induced crystallization and ablation of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) phase change film is investigated by reflectivity pump-probing technology. Below the ablation threshold, the face-centered cubic structure (FCC) state in the central area can be formed, and cylindrical rims are formed in the peripheral dewetting zone due to the solidification of transported matter. The time of surface temperature dropping to the crystallization point needs about 30 ps for 5.86 mJ/cm<sup>2</sup> and 82 ps for 7.04 mJ/cm<sup>2</sup>, respectively. At higher laser fluence, crystallization GST island structures appear in the central ablation region due to the extremely short heating time (100 ps). Furthermore, crystallization rate is faster than the ablation rate of the GST film, which is caused by different reflectivity. |
| first_indexed | 2024-03-10T11:00:57Z |
| format | Article |
| id | doaj.art-dd630e3ced4b4697bef4562ecebf135a |
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| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T11:00:57Z |
| publishDate | 2021-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-dd630e3ced4b4697bef4562ecebf135a2023-11-21T21:34:26ZengMDPI AGMicromachines2072-666X2021-05-0112661610.3390/mi12060616Transient Study of Femtosecond Laser–Induced Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Film MorphologyWenju Zhou0Zifeng Zhang1Qingwei Zhang2Dongfeng Qi3Tianxiang Xu4Shixun Dai5Xiang Shen6Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, ChinaCollege of Mechanical and Electronic Engineering, Chaohu University, Hefei 230000, ChinaLaboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, ChinaCenter for Advanced Laser Manufacturing (CALM), Shandong University of Technology, Zibo 255000, ChinaLaboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, ChinaLaboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, ChinaLaboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, ChinaFemtosecond laser-induced crystallization and ablation of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) phase change film is investigated by reflectivity pump-probing technology. Below the ablation threshold, the face-centered cubic structure (FCC) state in the central area can be formed, and cylindrical rims are formed in the peripheral dewetting zone due to the solidification of transported matter. The time of surface temperature dropping to the crystallization point needs about 30 ps for 5.86 mJ/cm<sup>2</sup> and 82 ps for 7.04 mJ/cm<sup>2</sup>, respectively. At higher laser fluence, crystallization GST island structures appear in the central ablation region due to the extremely short heating time (100 ps). Furthermore, crystallization rate is faster than the ablation rate of the GST film, which is caused by different reflectivity.https://www.mdpi.com/2072-666X/12/6/616laser-induced crystallizationpump-probing technologypulse laser irradiation |
| spellingShingle | Wenju Zhou Zifeng Zhang Qingwei Zhang Dongfeng Qi Tianxiang Xu Shixun Dai Xiang Shen Transient Study of Femtosecond Laser–Induced Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Film Morphology Micromachines laser-induced crystallization pump-probing technology pulse laser irradiation |
| title | Transient Study of Femtosecond Laser–Induced Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Film Morphology |
| title_full | Transient Study of Femtosecond Laser–Induced Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Film Morphology |
| title_fullStr | Transient Study of Femtosecond Laser–Induced Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Film Morphology |
| title_full_unstemmed | Transient Study of Femtosecond Laser–Induced Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Film Morphology |
| title_short | Transient Study of Femtosecond Laser–Induced Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Film Morphology |
| title_sort | transient study of femtosecond laser induced ge sub 2 sub sb sub 2 sub te sub 5 sub phase change film morphology |
| topic | laser-induced crystallization pump-probing technology pulse laser irradiation |
| url | https://www.mdpi.com/2072-666X/12/6/616 |
| work_keys_str_mv | AT wenjuzhou transientstudyoffemtosecondlaserinducedgesub2subsbsub2subtesub5subphasechangefilmmorphology AT zifengzhang transientstudyoffemtosecondlaserinducedgesub2subsbsub2subtesub5subphasechangefilmmorphology AT qingweizhang transientstudyoffemtosecondlaserinducedgesub2subsbsub2subtesub5subphasechangefilmmorphology AT dongfengqi transientstudyoffemtosecondlaserinducedgesub2subsbsub2subtesub5subphasechangefilmmorphology AT tianxiangxu transientstudyoffemtosecondlaserinducedgesub2subsbsub2subtesub5subphasechangefilmmorphology AT shixundai transientstudyoffemtosecondlaserinducedgesub2subsbsub2subtesub5subphasechangefilmmorphology AT xiangshen transientstudyoffemtosecondlaserinducedgesub2subsbsub2subtesub5subphasechangefilmmorphology |