Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices. Feedback field-effect transistors (FBFETs) have great potential to overcome the scaling challenges because of their one-transistor (1T) memory be...

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Bibliographic Details
Main Authors: Juhee Jeon, Kyoungah Cho, Sangsig Kim
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Micromachines
Subjects:
one-transistor dynamic random-access memory
memory array
silicon nanowire
feedback field-effect transistor
positive feedback mechanism
Online Access:https://www.mdpi.com/2072-666X/14/6/1138

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