Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure
Abstract Layered materials, such as graphene and transition metal dichalcogenides, are able to obtain new properties and functions through the modification of their crystal arrangements. In particular, ferromagnetism in polycrystalline MoS2 is of great interest because the corresponding nonmagnetic...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-10-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-22113-3 |
| _version_ | 1811182319975792640 |
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| author | Iriya Muneta Takanori Shirokura Pham Nam Hai Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi |
| author_facet | Iriya Muneta Takanori Shirokura Pham Nam Hai Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi |
| author_sort | Iriya Muneta |
| collection | DOAJ |
| description | Abstract Layered materials, such as graphene and transition metal dichalcogenides, are able to obtain new properties and functions through the modification of their crystal arrangements. In particular, ferromagnetism in polycrystalline MoS2 is of great interest because the corresponding nonmagnetic single crystals exhibit spontaneous spin splitting only through the formation of grain boundaries. However, no one has reported direct evidence of this unique phenomenon thus far. Herein, we demonstrate ferromagnetism modulation by an ultralow current density < 103 A/cm2 in 7.5-nm-thick polycrystalline MoS2, in which magnetoresistance shows three patterns according to the current intensity: wide dip, nondip and narrow dip structures. Since magnetoresistance occurs because of the interaction between the current of 4d electrons in the bulk and localized 4d spins in grain boundaries, this result provides evidence of the current modulation of ferromagnetism induced by grain boundaries. Our findings pave the way for the investigation of a novel method of magnetization switching with low power consumption for magnetic random access memories. |
| first_indexed | 2024-04-11T09:29:27Z |
| format | Article |
| id | doaj.art-dda183a6676b4b4b9870a3757832d4df |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-11T09:29:27Z |
| publishDate | 2022-10-01 |
| publisher | Nature Portfolio |
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| series | Scientific Reports |
| spelling | doaj.art-dda183a6676b4b4b9870a3757832d4df2022-12-22T04:31:55ZengNature PortfolioScientific Reports2045-23222022-10-011211910.1038/s41598-022-22113-3Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structureIriya Muneta0Takanori Shirokura1Pham Nam Hai2Kuniyuki Kakushima3Kazuo Tsutsui4Hitoshi Wakabayashi5Department of Electrical and Electronic Engineering, Tokyo Institute of TechnologyDepartment of Electrical and Electronic Engineering, Tokyo Institute of TechnologyDepartment of Electrical and Electronic Engineering, Tokyo Institute of TechnologyDepartment of Electrical and Electronic Engineering, Tokyo Institute of TechnologyLaboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of TechnologyDepartment of Electrical and Electronic Engineering, Tokyo Institute of TechnologyAbstract Layered materials, such as graphene and transition metal dichalcogenides, are able to obtain new properties and functions through the modification of their crystal arrangements. In particular, ferromagnetism in polycrystalline MoS2 is of great interest because the corresponding nonmagnetic single crystals exhibit spontaneous spin splitting only through the formation of grain boundaries. However, no one has reported direct evidence of this unique phenomenon thus far. Herein, we demonstrate ferromagnetism modulation by an ultralow current density < 103 A/cm2 in 7.5-nm-thick polycrystalline MoS2, in which magnetoresistance shows three patterns according to the current intensity: wide dip, nondip and narrow dip structures. Since magnetoresistance occurs because of the interaction between the current of 4d electrons in the bulk and localized 4d spins in grain boundaries, this result provides evidence of the current modulation of ferromagnetism induced by grain boundaries. Our findings pave the way for the investigation of a novel method of magnetization switching with low power consumption for magnetic random access memories.https://doi.org/10.1038/s41598-022-22113-3 |
| spellingShingle | Iriya Muneta Takanori Shirokura Pham Nam Hai Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure Scientific Reports |
| title | Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure |
| title_full | Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure |
| title_fullStr | Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure |
| title_full_unstemmed | Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure |
| title_short | Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure |
| title_sort | ferromagnetism modulation by ultralow current in a two dimensional polycrystalline molybdenum disulphide atomic layered structure |
| url | https://doi.org/10.1038/s41598-022-22113-3 |
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