Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis
As high-level equipment and advanced technologies continue toward sophistication, ultrasonic technology is extensively used in the polishing process of difficult-to-process materials to achieve efficiently smooth surfaces with nanometer roughness. The polishing of silicon carbide, an indispensable d...
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MDPI AG
2023-08-01
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author | Xin Chen Shucong Xu Fanwei Meng Tianbiao Yu Ji Zhao |
author_facet | Xin Chen Shucong Xu Fanwei Meng Tianbiao Yu Ji Zhao |
author_sort | Xin Chen |
collection | DOAJ |
description | As high-level equipment and advanced technologies continue toward sophistication, ultrasonic technology is extensively used in the polishing process of difficult-to-process materials to achieve efficiently smooth surfaces with nanometer roughness. The polishing of silicon carbide, an indispensable difficult-to-machine optical material, is extremely challenging due to its high hardness and good wear resistance. To overcome the current silicon carbide (SiC) ultrasonic polishing (UP) process deficiencies and strengthen the competitiveness of the UP industry, the multi-objective optimization based on the Taguchi–GRA method for the UP process with SiC ceramic to obtain the optimal process parameter combination is a vital and urgently demanded task. The orthogonal experiment, analysis of variance, grey relational analysis (GRA), and validation were performed to optimize the UP schemes. For a single objective of roughness and removal rate, the influence degree is abrasive size > preloading force > abrasive content > spindle speed > feed rate, and spindle speed > abrasive size > feed rate > preloading force > abrasive content, respectively. Moreover, the optimal process combination integrating these two objectives is an abrasive content of 14 wt%, abrasive size of 2.5 μm, preloading force of 80 N, spindle speed of 8000 rpm, and feed rate of 1 mm/s. The optimized workpiece surface morphology is better, and the roughness and removal rate are increased by 7.14% and 28.34%, respectively, compared to the best orthogonal group. The Taguchi–GRA method provides a more scientific approach for evaluating the comprehensive performance of polishing. The optimized process parameters have essential relevance for the ultrasonic polishing of SiC materials. |
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institution | Directory Open Access Journal |
issn | 1996-1944 |
language | English |
last_indexed | 2024-03-10T23:46:57Z |
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spelling | doaj.art-dda416b312504e9face1f87394a3e21d2023-11-19T02:01:05ZengMDPI AGMaterials1996-19442023-08-011616567310.3390/ma16165673Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational AnalysisXin Chen0Shucong Xu1Fanwei Meng2Tianbiao Yu3Ji Zhao4School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110819, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, ChinaSchool of Mechanical Engineering and Automation, Northeastern University, Shenyang 110819, ChinaSchool of Mechanical Engineering and Automation, Northeastern University, Shenyang 110819, ChinaSchool of Mechanical Engineering and Automation, Northeastern University, Shenyang 110819, ChinaAs high-level equipment and advanced technologies continue toward sophistication, ultrasonic technology is extensively used in the polishing process of difficult-to-process materials to achieve efficiently smooth surfaces with nanometer roughness. The polishing of silicon carbide, an indispensable difficult-to-machine optical material, is extremely challenging due to its high hardness and good wear resistance. To overcome the current silicon carbide (SiC) ultrasonic polishing (UP) process deficiencies and strengthen the competitiveness of the UP industry, the multi-objective optimization based on the Taguchi–GRA method for the UP process with SiC ceramic to obtain the optimal process parameter combination is a vital and urgently demanded task. The orthogonal experiment, analysis of variance, grey relational analysis (GRA), and validation were performed to optimize the UP schemes. For a single objective of roughness and removal rate, the influence degree is abrasive size > preloading force > abrasive content > spindle speed > feed rate, and spindle speed > abrasive size > feed rate > preloading force > abrasive content, respectively. Moreover, the optimal process combination integrating these two objectives is an abrasive content of 14 wt%, abrasive size of 2.5 μm, preloading force of 80 N, spindle speed of 8000 rpm, and feed rate of 1 mm/s. The optimized workpiece surface morphology is better, and the roughness and removal rate are increased by 7.14% and 28.34%, respectively, compared to the best orthogonal group. The Taguchi–GRA method provides a more scientific approach for evaluating the comprehensive performance of polishing. The optimized process parameters have essential relevance for the ultrasonic polishing of SiC materials.https://www.mdpi.com/1996-1944/16/16/5673ultrasonic polishingsilicon carbidemulti-objective optimizationgrey relational analysismaterial removal ratesurface roughness |
spellingShingle | Xin Chen Shucong Xu Fanwei Meng Tianbiao Yu Ji Zhao Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis Materials ultrasonic polishing silicon carbide multi-objective optimization grey relational analysis material removal rate surface roughness |
title | Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis |
title_full | Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis |
title_fullStr | Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis |
title_full_unstemmed | Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis |
title_short | Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis |
title_sort | multi objective optimization in ultrasonic polishing of silicon carbide via taguchi method and grey relational analysis |
topic | ultrasonic polishing silicon carbide multi-objective optimization grey relational analysis material removal rate surface roughness |
url | https://www.mdpi.com/1996-1944/16/16/5673 |
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