Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry
Abstract Fluorine‐free nanoporous low‐k dielectric film containing polyhedral oligomeric silsesquioxanes (POSS) cage nanostructure is covalently grafted onto a p‐Si(100) surface via aryldiazonium chemistry, in an open environment without any inert gas protection. The method is based on two‐step redu...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2021-12-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202101127 |
| _version_ | 1797763874937634816 |
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| author | Liangliang Cao Yunwen Wu Tao Hang Ming Li |
| author_facet | Liangliang Cao Yunwen Wu Tao Hang Ming Li |
| author_sort | Liangliang Cao |
| collection | DOAJ |
| description | Abstract Fluorine‐free nanoporous low‐k dielectric film containing polyhedral oligomeric silsesquioxanes (POSS) cage nanostructure is covalently grafted onto a p‐Si(100) surface via aryldiazonium chemistry, in an open environment without any inert gas protection. The method is based on two‐step reduction of aryldiazonium salts. First, 4‐nitrobenzene diazonium tetrafluoroborate (NBD) is reduced and a polynitrophenyl (PNP) passivation layer is formed on the p‐Si(100) surface, in an aqueous media with hydrofluoric acid being added. Second, NBD is reduced by electrons provided by external pulse power supply, and initiates octavinylsilsesquioxane polymerizing to form the film, which is composed of PNP and massive POSS cage, leading to a low k value. The average dielectric constant of the film is 2.12 at the range of 600 to 1700 nm wavelength, much lower than some low‐k materials reported by recent literature and traditional materials. The prepared films completely cover the Si substrate and are compact and thickness controllable. In particular, the k value can be controlled though the concentration of NBD. The low‐k properties imply they will be suitable to be utilized as high‐performance dielectric materials in future higher frequency communication field. |
| first_indexed | 2024-03-12T19:48:36Z |
| format | Article |
| id | doaj.art-ddb54c163de8441ca1ad69236e28de38 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T19:48:36Z |
| publishDate | 2021-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-ddb54c163de8441ca1ad69236e28de382023-08-02T03:24:30ZengWiley-VCHAdvanced Materials Interfaces2196-73502021-12-01824n/an/a10.1002/admi.202101127Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium ChemistryLiangliang Cao0Yunwen Wu1Tao Hang2Ming Li3State Key Laboratory of Metal Matrix Composites School of Material Science and Engineering Shanghai Jiao Tong University No. 800 Dongchuan Road Shanghai 200240 ChinaState Key Laboratory of Metal Matrix Composites School of Material Science and Engineering Shanghai Jiao Tong University No. 800 Dongchuan Road Shanghai 200240 ChinaState Key Laboratory of Metal Matrix Composites School of Material Science and Engineering Shanghai Jiao Tong University No. 800 Dongchuan Road Shanghai 200240 ChinaState Key Laboratory of Metal Matrix Composites School of Material Science and Engineering Shanghai Jiao Tong University No. 800 Dongchuan Road Shanghai 200240 ChinaAbstract Fluorine‐free nanoporous low‐k dielectric film containing polyhedral oligomeric silsesquioxanes (POSS) cage nanostructure is covalently grafted onto a p‐Si(100) surface via aryldiazonium chemistry, in an open environment without any inert gas protection. The method is based on two‐step reduction of aryldiazonium salts. First, 4‐nitrobenzene diazonium tetrafluoroborate (NBD) is reduced and a polynitrophenyl (PNP) passivation layer is formed on the p‐Si(100) surface, in an aqueous media with hydrofluoric acid being added. Second, NBD is reduced by electrons provided by external pulse power supply, and initiates octavinylsilsesquioxane polymerizing to form the film, which is composed of PNP and massive POSS cage, leading to a low k value. The average dielectric constant of the film is 2.12 at the range of 600 to 1700 nm wavelength, much lower than some low‐k materials reported by recent literature and traditional materials. The prepared films completely cover the Si substrate and are compact and thickness controllable. In particular, the k value can be controlled though the concentration of NBD. The low‐k properties imply they will be suitable to be utilized as high‐performance dielectric materials in future higher frequency communication field.https://doi.org/10.1002/admi.202101127aryldiazonium chemistrylow dielectric constantpolyhedral oligomeric silsesquioxanes |
| spellingShingle | Liangliang Cao Yunwen Wu Tao Hang Ming Li Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry Advanced Materials Interfaces aryldiazonium chemistry low dielectric constant polyhedral oligomeric silsesquioxanes |
| title | Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry |
| title_full | Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry |
| title_fullStr | Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry |
| title_full_unstemmed | Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry |
| title_short | Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry |
| title_sort | fluorine free nanoporous low k dielectric film covalently grafted on si via aryldiazonium chemistry |
| topic | aryldiazonium chemistry low dielectric constant polyhedral oligomeric silsesquioxanes |
| url | https://doi.org/10.1002/admi.202101127 |
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