Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry
Abstract Fluorine‐free nanoporous low‐k dielectric film containing polyhedral oligomeric silsesquioxanes (POSS) cage nanostructure is covalently grafted onto a p‐Si(100) surface via aryldiazonium chemistry, in an open environment without any inert gas protection. The method is based on two‐step redu...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2021-12-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202101127 |