Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals
The impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals with four and five different doping concentrations, respectively, has been studied in comparison with that of undoped GaSe. The inconsistence of the visual criterion of the damage threshold determination has been dem...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2014-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4868626 |
| _version_ | 1818219048061632512 |
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| author | Z.-S. Feng Z.-H. Kang X.-M. Li Zeng-Bin Wang J.-Y. Gao Yu. M. Andreev V. V. Atuchin K. A. Kokh G. V. Lanskii A. I. Potekaev A. V. Shaiduko V. A. Svetlichnyi |
| author_facet | Z.-S. Feng Z.-H. Kang X.-M. Li Zeng-Bin Wang J.-Y. Gao Yu. M. Andreev V. V. Atuchin K. A. Kokh G. V. Lanskii A. I. Potekaev A. V. Shaiduko V. A. Svetlichnyi |
| author_sort | Z.-S. Feng |
| collection | DOAJ |
| description | The impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals with four and five different doping concentrations, respectively, has been studied in comparison with that of undoped GaSe. The inconsistence of the visual criterion of the damage threshold determination has been demonstrated. The multiphoton absorption and thermal effect have been identified as key factors limiting fs and ns pulse pump intensities, respectively. High advantages in the limit pump intensity as up to 50% for optimally indium-doped crystal and up to 4.5 times for optimally sulfur-doped crystal have been demonstrated under fs pulses expose. |
| first_indexed | 2024-12-12T07:33:27Z |
| format | Article |
| id | doaj.art-ddcad6c1053045828efde7da4b43afd3 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-12T07:33:27Z |
| publishDate | 2014-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-ddcad6c1053045828efde7da4b43afd32022-12-22T00:32:58ZengAIP Publishing LLCAIP Advances2158-32262014-03-0143037104037104-610.1063/1.4868626004403ADVImpact of fs and ns pulses on indium and sulfur doped gallium selenide crystalsZ.-S. Feng0Z.-H. Kang1X.-M. Li2Zeng-Bin Wang3J.-Y. Gao4Yu. M. Andreev5V. V. Atuchin6K. A. Kokh7G. V. Lanskii8A. I. Potekaev9A. V. Shaiduko10V. A. Svetlichnyi11Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Rd., Changchun 130023, ChinaKey Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Rd., Changchun 130023, ChinaAviation University of Air Force, 2222 Nanhu Rd., Changchun 130022, ChinaQuantum Engineering Center, Beijing Institute of Control Devices, Beijing 100854, ChinaKey Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Rd., Changchun 130023, ChinaLaboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, 10/3 Academical Ave., Tomsk 634055, RussiaLaboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, 13 Lavrentiev Ave., Novosibirsk, 630090, RussiaNovosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, RussiaLaboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, 10/3 Academical Ave., Tomsk 634055, RussiaSiberian Physical-Technical Institute of the Tomsk State University, 1 Novosobornaya Sq., Tomsk 634050, RussiaLaboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, 10/3 Academical Ave., Tomsk 634055, RussiaSiberian Physical-Technical Institute of the Tomsk State University, 1 Novosobornaya Sq., Tomsk 634050, RussiaThe impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals with four and five different doping concentrations, respectively, has been studied in comparison with that of undoped GaSe. The inconsistence of the visual criterion of the damage threshold determination has been demonstrated. The multiphoton absorption and thermal effect have been identified as key factors limiting fs and ns pulse pump intensities, respectively. High advantages in the limit pump intensity as up to 50% for optimally indium-doped crystal and up to 4.5 times for optimally sulfur-doped crystal have been demonstrated under fs pulses expose.http://dx.doi.org/10.1063/1.4868626 |
| spellingShingle | Z.-S. Feng Z.-H. Kang X.-M. Li Zeng-Bin Wang J.-Y. Gao Yu. M. Andreev V. V. Atuchin K. A. Kokh G. V. Lanskii A. I. Potekaev A. V. Shaiduko V. A. Svetlichnyi Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals AIP Advances |
| title | Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals |
| title_full | Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals |
| title_fullStr | Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals |
| title_full_unstemmed | Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals |
| title_short | Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals |
| title_sort | impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals |
| url | http://dx.doi.org/10.1063/1.4868626 |
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