Solution-Induced Degradation of the Silicon Nanobelt Field-Effect Transistor Biosensors

Solution-Induced Degradation of the Silicon Nanobelt Field-Effect Transistor Biosensors

Field-effect transistor (FET)-based biosensors are powerful analytical tools for detecting trace-specific biomolecules in diverse sample matrices, especially in the realms of pandemics and infectious diseases. The primary concern in applying these biosensors is their stability, a factor directly imp...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Jung-Chih Lin, Zhao-Yu Zhou, Yi-Ching Cheng, I-Nan Chang, Chu-En Lin, Chi-Chang Wu
Aineistotyyppi: Artikkeli
Kieli:English
Julkaistu: MDPI AG 2024-01-01
Sarja:Biosensors
Aiheet:
silicon nanobelt
NBFET
nanobelt biosensor
degradation
ion penetration
surface functionalization
Linkit:https://www.mdpi.com/2079-6374/14/2/65

Internet

https://www.mdpi.com/2079-6374/14/2/65

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