Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors
We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by takin...
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MDPI AG
2021-06-01
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Series: | Nanomaterials |
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Online Access: | https://www.mdpi.com/2079-4991/11/7/1692 |
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author | Emmanuel K. Ampadu Jungdong Kim Eunsoon Oh |
author_facet | Emmanuel K. Ampadu Jungdong Kim Eunsoon Oh |
author_sort | Emmanuel K. Ampadu |
collection | DOAJ |
description | We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields. |
first_indexed | 2024-03-10T10:00:06Z |
format | Article |
id | doaj.art-de11c4304bf74bc391c0bfb32047c348 |
institution | Directory Open Access Journal |
issn | 2079-4991 |
language | English |
last_indexed | 2024-03-10T10:00:06Z |
publishDate | 2021-06-01 |
publisher | MDPI AG |
record_format | Article |
series | Nanomaterials |
spelling | doaj.art-de11c4304bf74bc391c0bfb32047c3482023-11-22T02:01:11ZengMDPI AGNanomaterials2079-49912021-06-01117169210.3390/nano11071692Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz PhotodetectorsEmmanuel K. Ampadu0Jungdong Kim1Eunsoon Oh2Department of Physics, Chungnam National University, Daejeon 34134, KoreaDepartment of Physics, Chungnam National University, Daejeon 34134, KoreaDepartment of Physics, Chungnam National University, Daejeon 34134, KoreaWe fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.https://www.mdpi.com/2079-4991/11/7/1692infrared photo-detectorphotovoltaicterahertz detectorphotocurrent transientFTIR |
spellingShingle | Emmanuel K. Ampadu Jungdong Kim Eunsoon Oh Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors Nanomaterials infrared photo-detector photovoltaic terahertz detector photocurrent transient FTIR |
title | Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors |
title_full | Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors |
title_fullStr | Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors |
title_full_unstemmed | Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors |
title_short | Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors |
title_sort | lateral pbs photovoltaic devices for high performance infrared and terahertz photodetectors |
topic | infrared photo-detector photovoltaic terahertz detector photocurrent transient FTIR |
url | https://www.mdpi.com/2079-4991/11/7/1692 |
work_keys_str_mv | AT emmanuelkampadu lateralpbsphotovoltaicdevicesforhighperformanceinfraredandterahertzphotodetectors AT jungdongkim lateralpbsphotovoltaicdevicesforhighperformanceinfraredandterahertzphotodetectors AT eunsoonoh lateralpbsphotovoltaicdevicesforhighperformanceinfraredandterahertzphotodetectors |