Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by takin...

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Main Authors: Emmanuel K. Ampadu, Jungdong Kim, Eunsoon Oh
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/7/1692
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author Emmanuel K. Ampadu
Jungdong Kim
Eunsoon Oh
author_facet Emmanuel K. Ampadu
Jungdong Kim
Eunsoon Oh
author_sort Emmanuel K. Ampadu
collection DOAJ
description We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.
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spelling doaj.art-de11c4304bf74bc391c0bfb32047c3482023-11-22T02:01:11ZengMDPI AGNanomaterials2079-49912021-06-01117169210.3390/nano11071692Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz PhotodetectorsEmmanuel K. Ampadu0Jungdong Kim1Eunsoon Oh2Department of Physics, Chungnam National University, Daejeon 34134, KoreaDepartment of Physics, Chungnam National University, Daejeon 34134, KoreaDepartment of Physics, Chungnam National University, Daejeon 34134, KoreaWe fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.https://www.mdpi.com/2079-4991/11/7/1692infrared photo-detectorphotovoltaicterahertz detectorphotocurrent transientFTIR
spellingShingle Emmanuel K. Ampadu
Jungdong Kim
Eunsoon Oh
Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors
Nanomaterials
infrared photo-detector
photovoltaic
terahertz detector
photocurrent transient
FTIR
title Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors
title_full Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors
title_fullStr Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors
title_full_unstemmed Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors
title_short Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors
title_sort lateral pbs photovoltaic devices for high performance infrared and terahertz photodetectors
topic infrared photo-detector
photovoltaic
terahertz detector
photocurrent transient
FTIR
url https://www.mdpi.com/2079-4991/11/7/1692
work_keys_str_mv AT emmanuelkampadu lateralpbsphotovoltaicdevicesforhighperformanceinfraredandterahertzphotodetectors
AT jungdongkim lateralpbsphotovoltaicdevicesforhighperformanceinfraredandterahertzphotodetectors
AT eunsoonoh lateralpbsphotovoltaicdevicesforhighperformanceinfraredandterahertzphotodetectors