Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device
Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> films with dense surfaces and uniform grains were prepared by the l...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/11/6/1361 |
| _version_ | 1797533239554867200 |
|---|---|
| author | Fengzhen Lv Tingting Zhong Yongfu Qin Haijun Qin Wenfeng Wang Fuchi Liu Wenjie Kong |
| author_facet | Fengzhen Lv Tingting Zhong Yongfu Qin Haijun Qin Wenfeng Wang Fuchi Liu Wenjie Kong |
| author_sort | Fengzhen Lv |
| collection | DOAJ |
| description | Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> film, Pt/Cs<sub>2</sub>AgBiBr<sub>6</sub>/ITO/glass, presents obvious bipolar resistive switching behavior. The <i>R</i><sub>OFF</sub>/<i>R</i><sub>ON</sub> ratio under 445 nm wavelength light illumination is ~100 times greater than that in darkness. A long retention capability (>2400 s) and cycle-to-cycle consistency (>500 times) were observed in this device under light illumination. The resistive switching behavior is primarily attributed to the trap-controlled space-charge-limited current mechanism caused by bromine vacancies in the Cs<sub>2</sub>AgBiBr<sub>6</sub> medium layer. Light modulates resistive states by regulating the condition of photo-generated carriers and changing the Schottky-like barrier of the Pt/Cs<sub>2</sub>AgBiBr<sub>6</sub> interface under bias voltage sweeping. |
| first_indexed | 2024-03-10T11:11:43Z |
| format | Article |
| id | doaj.art-de1ebac63e0043dfb4f99e6518fba47c |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T11:11:43Z |
| publishDate | 2021-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-de1ebac63e0043dfb4f99e6518fba47c2023-11-21T20:46:33ZengMDPI AGNanomaterials2079-49912021-05-01116136110.3390/nano11061361Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory DeviceFengzhen Lv0Tingting Zhong1Yongfu Qin2Haijun Qin3Wenfeng Wang4Fuchi Liu5Wenjie Kong6Guangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaLight-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> film, Pt/Cs<sub>2</sub>AgBiBr<sub>6</sub>/ITO/glass, presents obvious bipolar resistive switching behavior. The <i>R</i><sub>OFF</sub>/<i>R</i><sub>ON</sub> ratio under 445 nm wavelength light illumination is ~100 times greater than that in darkness. A long retention capability (>2400 s) and cycle-to-cycle consistency (>500 times) were observed in this device under light illumination. The resistive switching behavior is primarily attributed to the trap-controlled space-charge-limited current mechanism caused by bromine vacancies in the Cs<sub>2</sub>AgBiBr<sub>6</sub> medium layer. Light modulates resistive states by regulating the condition of photo-generated carriers and changing the Schottky-like barrier of the Pt/Cs<sub>2</sub>AgBiBr<sub>6</sub> interface under bias voltage sweeping.https://www.mdpi.com/2079-4991/11/6/1361light modulationCs<sub>2</sub>AgBiBr<sub>6</sub>bipolar resistive switching behaviorbromine vacancyspace-charge-limited current mechanismSchottky-like barrier |
| spellingShingle | Fengzhen Lv Tingting Zhong Yongfu Qin Haijun Qin Wenfeng Wang Fuchi Liu Wenjie Kong Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device Nanomaterials light modulation Cs<sub>2</sub>AgBiBr<sub>6</sub> bipolar resistive switching behavior bromine vacancy space-charge-limited current mechanism Schottky-like barrier |
| title | Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device |
| title_full | Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device |
| title_fullStr | Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device |
| title_full_unstemmed | Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device |
| title_short | Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device |
| title_sort | resistive switching characteristics improved by visible light irradiation in a cs sub 2 sub agbibr sub 6 sub based memory device |
| topic | light modulation Cs<sub>2</sub>AgBiBr<sub>6</sub> bipolar resistive switching behavior bromine vacancy space-charge-limited current mechanism Schottky-like barrier |
| url | https://www.mdpi.com/2079-4991/11/6/1361 |
| work_keys_str_mv | AT fengzhenlv resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice AT tingtingzhong resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice AT yongfuqin resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice AT haijunqin resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice AT wenfengwang resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice AT fuchiliu resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice AT wenjiekong resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice |