| Summary: | Abstract Bio‐memristor can address the inherent limitations of conventional memory components in artificial perceptual systems due to their biocompatibility with biological tissue. The actual deployment of bio‐memristor is restricted by the lack of reproducibility, high power consumption, and insufficient storage capacity. Here, a reproducible and low‐power multistate bio‐memristor is developed by designing the chitosan (CS)‐reduced graphene oxide (rGO) interpenetrating network electrolyte. The interpenetrating network structure of the CS‐rGO electrolyte reinforces structural stability and improves ionic conductivity. The bio‐memristor equipped with CS‐rGO active layer shows stable bipolar resistive switching up to 100 consecutive cycles, reproducible multistate storage with six different memory states, and low programming power of 9.4 μW. The fabricated biocompatible CS‐rGO device also exhibits deformation stability of memory operation over 103 bending cycles, high biocompatibility with HEK293 cells, and skin adhesion. This work provides an enlightening design strategy to develop high‐performance bio‐memristors for applications in artificial perceptual systems.
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