Reproducible and low‐power multistate bio‐memristor from interpenetrating network electrolyte design

Abstract Bio‐memristor can address the inherent limitations of conventional memory components in artificial perceptual systems due to their biocompatibility with biological tissue. The actual deployment of bio‐memristor is restricted by the lack of reproducibility, high power consumption, and insuff...

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Main Authors: Bin Zhao, Xuan Zhao, Qi Li, Xiaochen Xun, Tian Ouyang, Zheng Zhang, Zhuo Kang, Qingliang Liao, Yue Zhang
Format: Article
Language:English
Published: Wiley 2022-11-01
Series:InfoMat
Subjects:
Online Access:https://doi.org/10.1002/inf2.12350
_version_ 1811189377817116672
author Bin Zhao
Xuan Zhao
Qi Li
Xiaochen Xun
Tian Ouyang
Zheng Zhang
Zhuo Kang
Qingliang Liao
Yue Zhang
author_facet Bin Zhao
Xuan Zhao
Qi Li
Xiaochen Xun
Tian Ouyang
Zheng Zhang
Zhuo Kang
Qingliang Liao
Yue Zhang
author_sort Bin Zhao
collection DOAJ
description Abstract Bio‐memristor can address the inherent limitations of conventional memory components in artificial perceptual systems due to their biocompatibility with biological tissue. The actual deployment of bio‐memristor is restricted by the lack of reproducibility, high power consumption, and insufficient storage capacity. Here, a reproducible and low‐power multistate bio‐memristor is developed by designing the chitosan (CS)‐reduced graphene oxide (rGO) interpenetrating network electrolyte. The interpenetrating network structure of the CS‐rGO electrolyte reinforces structural stability and improves ionic conductivity. The bio‐memristor equipped with CS‐rGO active layer shows stable bipolar resistive switching up to 100 consecutive cycles, reproducible multistate storage with six different memory states, and low programming power of 9.4 μW. The fabricated biocompatible CS‐rGO device also exhibits deformation stability of memory operation over 103 bending cycles, high biocompatibility with HEK293 cells, and skin adhesion. This work provides an enlightening design strategy to develop high‐performance bio‐memristors for applications in artificial perceptual systems.
first_indexed 2024-04-11T14:34:41Z
format Article
id doaj.art-de3919ccaf0949ef80ff67f7f56ca5d6
institution Directory Open Access Journal
issn 2567-3165
language English
last_indexed 2024-04-11T14:34:41Z
publishDate 2022-11-01
publisher Wiley
record_format Article
series InfoMat
spelling doaj.art-de3919ccaf0949ef80ff67f7f56ca5d62022-12-22T04:18:24ZengWileyInfoMat2567-31652022-11-01411n/an/a10.1002/inf2.12350Reproducible and low‐power multistate bio‐memristor from interpenetrating network electrolyte designBin Zhao0Xuan Zhao1Qi Li2Xiaochen Xun3Tian Ouyang4Zheng Zhang5Zhuo Kang6Qingliang Liao7Yue Zhang8Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology Beijing Beijing People's Republic of ChinaAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology Beijing Beijing People's Republic of ChinaAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology Beijing Beijing People's Republic of ChinaAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology Beijing Beijing People's Republic of ChinaAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology Beijing Beijing People's Republic of ChinaAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology Beijing Beijing People's Republic of ChinaAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology Beijing Beijing People's Republic of ChinaAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology Beijing Beijing People's Republic of ChinaAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology Beijing Beijing People's Republic of ChinaAbstract Bio‐memristor can address the inherent limitations of conventional memory components in artificial perceptual systems due to their biocompatibility with biological tissue. The actual deployment of bio‐memristor is restricted by the lack of reproducibility, high power consumption, and insufficient storage capacity. Here, a reproducible and low‐power multistate bio‐memristor is developed by designing the chitosan (CS)‐reduced graphene oxide (rGO) interpenetrating network electrolyte. The interpenetrating network structure of the CS‐rGO electrolyte reinforces structural stability and improves ionic conductivity. The bio‐memristor equipped with CS‐rGO active layer shows stable bipolar resistive switching up to 100 consecutive cycles, reproducible multistate storage with six different memory states, and low programming power of 9.4 μW. The fabricated biocompatible CS‐rGO device also exhibits deformation stability of memory operation over 103 bending cycles, high biocompatibility with HEK293 cells, and skin adhesion. This work provides an enlightening design strategy to develop high‐performance bio‐memristors for applications in artificial perceptual systems.https://doi.org/10.1002/inf2.12350bio‐memristorchitosaninterpenetrating network electrolytereproducible multistatestructural stability
spellingShingle Bin Zhao
Xuan Zhao
Qi Li
Xiaochen Xun
Tian Ouyang
Zheng Zhang
Zhuo Kang
Qingliang Liao
Yue Zhang
Reproducible and low‐power multistate bio‐memristor from interpenetrating network electrolyte design
InfoMat
bio‐memristor
chitosan
interpenetrating network electrolyte
reproducible multistate
structural stability
title Reproducible and low‐power multistate bio‐memristor from interpenetrating network electrolyte design
title_full Reproducible and low‐power multistate bio‐memristor from interpenetrating network electrolyte design
title_fullStr Reproducible and low‐power multistate bio‐memristor from interpenetrating network electrolyte design
title_full_unstemmed Reproducible and low‐power multistate bio‐memristor from interpenetrating network electrolyte design
title_short Reproducible and low‐power multistate bio‐memristor from interpenetrating network electrolyte design
title_sort reproducible and low power multistate bio memristor from interpenetrating network electrolyte design
topic bio‐memristor
chitosan
interpenetrating network electrolyte
reproducible multistate
structural stability
url https://doi.org/10.1002/inf2.12350
work_keys_str_mv AT binzhao reproducibleandlowpowermultistatebiomemristorfrominterpenetratingnetworkelectrolytedesign
AT xuanzhao reproducibleandlowpowermultistatebiomemristorfrominterpenetratingnetworkelectrolytedesign
AT qili reproducibleandlowpowermultistatebiomemristorfrominterpenetratingnetworkelectrolytedesign
AT xiaochenxun reproducibleandlowpowermultistatebiomemristorfrominterpenetratingnetworkelectrolytedesign
AT tianouyang reproducibleandlowpowermultistatebiomemristorfrominterpenetratingnetworkelectrolytedesign
AT zhengzhang reproducibleandlowpowermultistatebiomemristorfrominterpenetratingnetworkelectrolytedesign
AT zhuokang reproducibleandlowpowermultistatebiomemristorfrominterpenetratingnetworkelectrolytedesign
AT qingliangliao reproducibleandlowpowermultistatebiomemristorfrominterpenetratingnetworkelectrolytedesign
AT yuezhang reproducibleandlowpowermultistatebiomemristorfrominterpenetratingnetworkelectrolytedesign