A Three Demultiplexer C-Band Using Angled Multimode Interference in GaN–SiO<sub>2</sub> Slot Waveguide Structures

One of the most common techniques for increasing data bitrate using the telecommunication system is to use dense wavelength division multiplexing (DWDM). However, the implementation of DWDM with more channels requires additional waveguide coupler devices and greater energy consumption, which can lim...

Full description

Bibliographic Details
Main Authors: Eduard Ioudashkin, Dror Malka
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/10/12/2338
Description
Summary:One of the most common techniques for increasing data bitrate using the telecommunication system is to use dense wavelength division multiplexing (DWDM). However, the implementation of DWDM with more channels requires additional waveguide coupler devices and greater energy consumption, which can limit the system performances. To solve these issues, we propose a new approach for designing the demultiplexer using angled multimode interference (AMMI) in gallium nitride (GaN)–silica (SiO<sub>2</sub>) slot waveguide structures. SiO<sub>2</sub> and GaN materials are selected for confining the infrared light inside the GaN areas under the transverse electric (TE) field mode. The results show that, after 3.56 mm light propagation, three infrared wavelengths in the C-band can be demultiplexed using a single AMMI coupler with a power loss of 1.31 to 2.44 dB, large bandwidth of 12 to 13.69 nm, very low power back reflection of 47.64 to 48.76 dB, and crosstalk of −12.67 to −15.62 dB. Thus, the proposed design has the potential for improving performances in the telecommunication system that works with DWDM technology.
ISSN:2079-4991