Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm...
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Nature Portfolio
2020-03-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-020-14902-z |
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author | Yijun Xu Xinyao Shi Yushuang Zhang Hongtao Zhang Qinglin Zhang Zengli Huang Xiangfan Xu Jie Guo Han Zhang Litao Sun Zhongming Zeng Anlian Pan Kai Zhang |
author_facet | Yijun Xu Xinyao Shi Yushuang Zhang Hongtao Zhang Qinglin Zhang Zengli Huang Xiangfan Xu Jie Guo Han Zhang Litao Sun Zhongming Zeng Anlian Pan Kai Zhang |
author_sort | Yijun Xu |
collection | DOAJ |
description | Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm2 /Vs at room temperature, respectively and a current on/off ratio of up to 106, comparable to the exfoliated flakes. |
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id | doaj.art-de81f38ffd1f43e58578361acbaa9d7d |
institution | Directory Open Access Journal |
issn | 2041-1723 |
language | English |
last_indexed | 2024-12-17T10:28:24Z |
publishDate | 2020-03-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Nature Communications |
spelling | doaj.art-de81f38ffd1f43e58578361acbaa9d7d2022-12-21T21:52:36ZengNature PortfolioNature Communications2041-17232020-03-011111810.1038/s41467-020-14902-zEpitaxial nucleation and lateral growth of high-crystalline black phosphorus films on siliconYijun Xu0Xinyao Shi1Yushuang Zhang2Hongtao Zhang3Qinglin Zhang4Zengli Huang5Xiangfan Xu6Jie Guo7Han Zhang8Litao Sun9Zhongming Zeng10Anlian Pan11Kai Zhang12CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of SciencesCAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of SciencesKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronic Science, Hunan UniversitySEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast UniversityKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronic Science, Hunan UniversityVacuum interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of SciencesCenter for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji UniversityCenter for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji UniversityShenzhen Engineering Laboratory of phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen UniversitySEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast UniversityCAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of SciencesKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronic Science, Hunan UniversityCAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of SciencesDirect synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm2 /Vs at room temperature, respectively and a current on/off ratio of up to 106, comparable to the exfoliated flakes.https://doi.org/10.1038/s41467-020-14902-z |
spellingShingle | Yijun Xu Xinyao Shi Yushuang Zhang Hongtao Zhang Qinglin Zhang Zengli Huang Xiangfan Xu Jie Guo Han Zhang Litao Sun Zhongming Zeng Anlian Pan Kai Zhang Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon Nature Communications |
title | Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon |
title_full | Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon |
title_fullStr | Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon |
title_full_unstemmed | Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon |
title_short | Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon |
title_sort | epitaxial nucleation and lateral growth of high crystalline black phosphorus films on silicon |
url | https://doi.org/10.1038/s41467-020-14902-z |
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